NTNS3A65PZ MOSFET Single, P-Channel, Small Signal, SOT-883 (XDFN3), 1.0 x 0.6 x 0.4 mm NTNS3A65PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 804 JA C/W JunctiontoAmbient t 5 s (Note 3) R 574 JA 2 3. Surfacemounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 11 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 20 V DS GatetoSource Leakage Current I V = 0 V, V = 5 V 10 A GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.2 GS(TH) J mV/C Coefficient V = 4.5 V, I = 200 mA 0.9 1.3 GS D V = 2.5 V, I = 100 mA 1.3 2.0 GS D DraintoSource On Resistance R DS(on) V = 1.8 V, I = 50 mA 1.8 3.4 GS D V = 1.5 V, I = 10 mA 2.3 4.5 GS D Forward Transconductance g V = 5 V, I = 200 mA 0.58 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 100 mA 0.8 1.2 V SD GS S CHARGES & CAPACITANCES Input Capacitance C 44 ISS Output Capacitance C 6.7 V = 0 V, freq = 1 MHz, V = 10 V pF OSS GS DS Reverse Transfer Capacitance C 5.5 RSS Total Gate Charge Q 1.1 G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V GS DS nC I = 200 mA D GatetoSource Charge Q 0.2 GS GatetoDrain Charge Q 0.2 GD SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 18 d(ON) Rise Time t 32 r V = 4.5 V, V = 10 V, GS DD ns I = 200 mA, R = 2 D G TurnOff Delay Time t 178 d(OFF) Fall Time t 84 f 4. Switching characteristics are independent of operating junction temperatures