NTR2101P MOSFET Single P-Channel, Small Signal, SOT-23 -8.0 V, -3.7 A www.onsemi.com Features V R Typ I Max (BR)DSS DS(on) D Leading Trench Technology for Low R DS(on) 39 m 4.5 V 1.8 V Rated for Low Voltage Gate Drive 8.0 V 3.7 A 52 m 2.5 V SOT23 Surface Mount for Small Footprint (3 x 3 mm) This is a PbFree Device 79 m 1.8 V Applications PChannel High Side Load Switch D DCDC Conversion Cell Phone, Notebook, PDAs, etc. MAXIMUM RATINGS (T = 25C unless otherwise stated) J G Parameter Symbol Value Unit DraintoSource Voltage V 8.0 V DSS S GatetoSource Voltage V 8.0 V GS MARKING DIAGRAM & Continuous Drain t 5 s T = 25C I 3.7 A A D PIN ASSIGNMENT Current (Note 1) 3 T = 70C 3.0 A Drain 3 Power Dissipation t 5 s P 0.96 W D 1 (Note 1) 2 TR7 M Pulsed Drain Current t = 10 s I 11 A p DM SOT23 Operating Junction and Storage Temperature T , 55 to C J CASE 318 T 150 STG 1 2 STYLE 21 Gate Source Source Current (Body Diode) I 1.2 A S Lead Temperature for Soldering Purposes 260 C TR7 = Specific Device Code T L (1/8 from case for 10 s) M = Date Code* = PbFree Package THERMAL RESISTANCE RATINGS (Note: Microdot may be in either location) *Date Code orientation may vary depending Parameter Symbol Max Unit upon manufacturing location. JunctiontoAmbient Steady State R 160 C/W JA JunctiontoAmbient t 5 s R 130 JA ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size NTR2101PT1G SOT23 3000/Tape & Reel (Cu area = 1.127 in sq 1 oz including traces). (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: June, 2019 Rev. 7 NTR2101P/DNTR2101P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 8.0 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 10 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 6.4 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.40 1.0 V GS(TH) GS DS D Negative Threshold V /T 2.7 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R V = 4.5 V, I = 3.5 A 39 52 DS(on) GS D m V = 2.5 V, I = 3.0 A 52 72 GS D V = 1.8 V, I = 2.0 A 79 120 GS D Forward Transconductance g V = 5.0 V, I = 3.5 A 9.0 S FS GS D CHARGES AND CAPACITANCES Input Capacitance C 1173 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 289 OSS V = 4.0 V DS Reverse Transfer Capacitance C 218 RSS Total Gate Charge Q 12 15 nC G(TOT) V = 4.5 V, V = 4.0 V, GS DS GatetoSource Charge Q 3.8 GS I = 3.5 A D GatetoDrain Charge Q 2.5 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 7.4 15 ns d(on) Rise Time t 15.75 25 r V = 4.5 V, V = 4.0 V, GS DD I = 1.2 A, R = 6.0 D G TurnOff Delay Time t 38 58 d(off) Fall Time t 31 51 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V SD GS T = 25C 0.73 1.2 J I = 1.2 A S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2