NTR3C21NZ MOSFET Power, Single, N-Channel, SOT-23, 2.4 x 2.9 x 1.0 mm 20 V, 3.6 A www.onsemi.com Features Advanced Trench Technology V R Max I MAX (BR)DSS DS(on) D UltraLow R in SOT23 Package DS(on) 24 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 26 m 3.7 V Compliant 20 V 29 m 3.3 V 3.6 A Applications 33 m 2.5 V Power Load Switch 55 m 1.8 V Power Management NChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS G GatetoSource Voltage V 8 V GS 1 Continuous Drain Current Steady T = 25C I 3.6 A A D (Note 1) State T = 85C 2.6 A S 2 t 5 s T = 25C 6.5 A Power Dissipation Steady T = 25C P 0.47 W A D MARKING DIAGRAM & (Note 1) State PIN ASSIGNMENT t 5 s 1.56 Drain 3 Pulsed Drain Current t = 10 s I 13.2 A p DM Operating Junction and Storage Temperature T , 55 to C J TRY M T 150 STG SOT23 Source Current (Body Diode) (Note 2) I 2.2 A S CASE 318 1 2 STYLE 21 Lead Temperature for Soldering Purposes T 260 C L Gate Source (1/8 in from case for 10 s) TRY = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS *Date Code orientation may vary depending upon manufacturing location. Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 264 C/W JA ORDERING INFORMATION JunctiontoAmbient t 5 s (Note 1) R 80 JA Device Package Shipping 1. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. 1 oz including traces). NTR3C21NZT1G SOT23 3000 / Tape & 2. Pulse Test: pulse width 300 ms, duty cycle 2%. (PbFree) Reel NTR3C21NZT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 2 NTR3C21NZ/DNTR3C21NZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 21.6 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 20 V DS T = 85C 5.0 A J GatetoSource Leakage Current I V = 0 V, V = 8 V 10 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.7 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V I = 5 A 18 24 m DS(on) GS D V = 3.7 V I = 4 A 18.5 26 GS D V = 3.3 V I = 3 A 19 29 GS D V = 2.5 V I = 2 A 20 33 GS D V = 1.8 V I = 1 A 25 55 GS D Forward Transconductance g V = 5 V, I = 3 A 20 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1540 pF iss Output Capacitance C 105 V = 0 V, f = 1.0 MHz, V = 16 V oss GS DS Reverse Transfer Capacitance C 86 rss Total Gate Charge Q 17.8 nC G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 16 V, I = 5 A GS DS D GatetoSource Charge Q 3.0 GS GatetoDrain Charge Q 0.8 GD SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 7.0 d(on) Rise Time t 14 r V = 4.5 V, V = 16 V, GS DS I = 5 A, R = 6.0 D G TurnOff Delay Time t 420 d(off) Fall Time t 4670 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.7 1.0 V SD J V = 0 V, GS I = 2.0 A S T = 125C 0.56 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2