X-On Electronics has gained recognition as a prominent supplier of NTR3C21NZT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTR3C21NZT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTR3C21NZT1G ON Semiconductor

NTR3C21NZT1G electronic component of ON Semiconductor
NTR3C21NZT1G ON Semiconductor
NTR3C21NZT1G MOSFETs
NTR3C21NZT1G  Semiconductors

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See Product Specifications
Part No. NTR3C21NZT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20 V SANYO T6 NCH IN
Datasheet: NTR3C21NZT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1626 ea
Line Total: USD 487.8 
Availability - 8730
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1595
6000 : USD 0.1552
9000 : USD 0.1513
12000 : USD 0.149
27000 : USD 0.1456
51000 : USD 0.1435
102000 : USD 0.1414
150000 : USD 0.1393

8377
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 180
Multiples : 1
180 : USD 0.3608
181 : USD 0.3581
183 : USD 0.3554
184 : USD 0.3528
250 : USD 0.3501
500 : USD 0.3475
1000 : USD 0.3448
3000 : USD 0.3289
6000 : USD 0.3264

4297
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 193
Multiples : 1
193 : USD 0.336
262 : USD 0.2479
400 : USD 0.1624
500 : USD 0.139

8730
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1626
9000 : USD 0.1393
45000 : USD 0.1389

4297
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 262
Multiples : 1
262 : USD 0.2479
400 : USD 0.1624

5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.2074
6000 : USD 0.2018
9000 : USD 0.1966
12000 : USD 0.1937
27000 : USD 0.1894

8377
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 183
Multiples : 1
183 : USD 0.3554
184 : USD 0.3528
250 : USD 0.3501
500 : USD 0.3475
1000 : USD 0.3448
3000 : USD 0.3289
6000 : USD 0.3264

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NTR3C21NZT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR3C21NZT1G and other electronic components in the MOSFETs category and beyond.

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NTR3C21NZ MOSFET Power, Single, N-Channel, SOT-23, 2.4 x 2.9 x 1.0 mm 20 V, 3.6 A www.onsemi.com Features Advanced Trench Technology V R Max I MAX (BR)DSS DS(on) D UltraLow R in SOT23 Package DS(on) 24 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 26 m 3.7 V Compliant 20 V 29 m 3.3 V 3.6 A Applications 33 m 2.5 V Power Load Switch 55 m 1.8 V Power Management NChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS G GatetoSource Voltage V 8 V GS 1 Continuous Drain Current Steady T = 25C I 3.6 A A D (Note 1) State T = 85C 2.6 A S 2 t 5 s T = 25C 6.5 A Power Dissipation Steady T = 25C P 0.47 W A D MARKING DIAGRAM & (Note 1) State PIN ASSIGNMENT t 5 s 1.56 Drain 3 Pulsed Drain Current t = 10 s I 13.2 A p DM Operating Junction and Storage Temperature T , 55 to C J TRY M T 150 STG SOT23 Source Current (Body Diode) (Note 2) I 2.2 A S CASE 318 1 2 STYLE 21 Lead Temperature for Soldering Purposes T 260 C L Gate Source (1/8 in from case for 10 s) TRY = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS *Date Code orientation may vary depending upon manufacturing location. Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 264 C/W JA ORDERING INFORMATION JunctiontoAmbient t 5 s (Note 1) R 80 JA Device Package Shipping 1. Surfacemounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. 1 oz including traces). NTR3C21NZT1G SOT23 3000 / Tape & 2. Pulse Test: pulse width 300 ms, duty cycle 2%. (PbFree) Reel NTR3C21NZT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 2 NTR3C21NZ/DNTR3C21NZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 21.6 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 20 V DS T = 85C 5.0 A J GatetoSource Leakage Current I V = 0 V, V = 8 V 10 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.7 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V I = 5 A 18 24 m DS(on) GS D V = 3.7 V I = 4 A 18.5 26 GS D V = 3.3 V I = 3 A 19 29 GS D V = 2.5 V I = 2 A 20 33 GS D V = 1.8 V I = 1 A 25 55 GS D Forward Transconductance g V = 5 V, I = 3 A 20 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1540 pF iss Output Capacitance C 105 V = 0 V, f = 1.0 MHz, V = 16 V oss GS DS Reverse Transfer Capacitance C 86 rss Total Gate Charge Q 17.8 nC G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 16 V, I = 5 A GS DS D GatetoSource Charge Q 3.0 GS GatetoDrain Charge Q 0.8 GD SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 7.0 d(on) Rise Time t 14 r V = 4.5 V, V = 16 V, GS DS I = 5 A, R = 6.0 D G TurnOff Delay Time t 420 d(off) Fall Time t 4670 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.7 1.0 V SD J V = 0 V, GS I = 2.0 A S T = 125C 0.56 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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