NTTFS4C06N MOSFET Power, Single, N-Channel, 8FL 30 V, 67 A Features NTTFS4C06N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 10 V, I = 20 A, E = 20 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 4.1 JC JunctiontoAmbient Steady State (Note 4) R 58 JA C/W JunctiontoAmbient Steady State (Note 5) 154.3 R JA JunctiontoAmbient (t 10 s) (Note 4) R 28.3 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 12.6 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.4 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 3.4 4.2 DS(on) GS D m V = 4.5 V I = 30 A 4.9 6.1 GS D Forward Transconductance g V = 1.5 V, I = 15 A 58 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1683 3366 ISS Output Capacitance C 841 1682 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 40 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.023 RSS ISS GS DS Total Gate Charge Q 11.6 16.2 G(TOT) Threshold Gate Charge Q 2.6 3.6 G(TH) nC GatetoSource Charge Q 4.7 6.6 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.0 5.6 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 26 36 nC G(TOT) GS DS D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures.