NTD5414N, NVD5414N Power MOSFET 24 A, 60 V Single NChannel DPAK Features Low R DS(on) High Current Capability NTD5414N, NVD5414N ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS DS D DraintoSource Breakdown Voltage Temper- V /T 67.3 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V A T = 25C 1.0 DSS GS J V = 60 V DS T = 150C 50 J GateBody Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 3.2 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 0.74 mV/C GS(th) J DraintoSource OnVoltage V V = 10 V, I = 24 A 0.7 1.16 V DS(on) GS D V = 10 V, I = 12 A, 150C 0.7 GS D DraintoSource OnResistance R V = 10 V, I = 24 A 28.4 37 m DS(on) GS D Forward Transconductance g V = 15 V, I = 20 A 24 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE V = 25 V, V = 0 V, pF Input Capacitance C 800 1200 DS GS iss f = 1 MHz Output Capacitance C 165 oss Transfer Capacitance C 75 rss Total Gate Charge Q V = 10 V, V = 48 V, 25 48 nC GS DS G(TOT) I = 24 A D Threshold Gate Charge Q 1.1 G(TH) GatetoSource Charge Q 4.8 GS GatetoDrain Charge Q 11.3 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t V = 10 V, V = 48 V, 12 ns GS DD d(on) I = 24 A, R = 9.1 D G Rise Time t 58 r TurnOff Delay Time t 47 d(off) Fall Time t 69 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 2) V V = 0 V T = 25C 0.92 1.15 V SD GS J I = 24 A S T = 125C 0.8 J I = 24 A , V = 0 V , ns Reverse Recovery Time t 45.7 S dc GS dc rr dI /dt = 100 A/ s S Charge Time t 31.7 a Discharge Time t 14 b Reverse Recovery Stored Charge Q 76 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.