NVD5862N Power MOSFET 60 V, 5.7 m , 98 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R I (BR)DSS DS(on) D Compliant 60 V 5.7 m 10 V 98 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS NChannel G Continuous Drain Cur- T = 25C I 98 A C D rent R (Note 1) JC T = 100C 69 C Steady S State Power Dissipation R T = 25C P 115 W D JC C (Note 1) T = 100C 58 C 4 Continuous Drain Cur- T = 25C I 18 A A D rent R (Notes 1 & 2) JA T = 100C 13 A Steady 2 1 State Power Dissipation R T = 25C P 4.1 W JA A D 3 (Notes 1 & 2) T = 100C 2.0 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 367 A CASE 369C A p DM (Surface Mount) Current Limited by T = 25C I 60 A A Dmaxpkg STYLE 2 Package (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg MARKING DIAGRAMS 175 & PIN ASSIGNMENT Source Current (Body Diode) I 96 A S 4 Drain Single Pulse DraintoSource Avalanche E 205 mJ AS Energy (T = 25C, V = 50 V, V = 10 V, J DD GS I = 37 A, L = 0.3 mH, R = 25 ) L(pk) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the 2 Drain device. If any of these limits are exceeded, device functionality should not be 1 3 Gate Source assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location* Y = Year Parameter Symbol Value Unit WW = Work Week JunctiontoCase Steady State (Drain) R 1.3 C/W JC V5862N= Device Code G = PbFree Package JunctiontoAmbient Steady State (Note 2) R 37 JA 1. The entire application environment impacts the thermal resistance values shown, * The Assembly Location Code (A) is front side they are not constants and are only valid for the particular conditions noted. 2 optional. In cases where the Assembly Location is 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 stamped in the package bottom (molding ejecter second are higher but are dependent on pulse duration and duty cycle. pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2017 Rev. 3 NVD5862N/D AYWW V58 62NGNVD5862N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 60 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V /T 47 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 9.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 48 A 4.4 5.7 m DS(on) GS D Forward Transconductance gFS V = 15 V, I = 10 A 18 S DS D CHARGES, CAPACITANCES AND GATE RESISTANCES pF Input Capacitance C 5050 6000 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 500 600 oss V = 25 V DS Reverse Transfer Capacitance C 300 420 rss Total Gate Charge Q 82 nC G(TOT) Threshold Gate Charge Q 5.2 G(TH) V = 10 V, V = 48 V, GS DS I = 48 A D GatetoSource Charge Q 24 GS GatetoDrain Charge Q 27 GD Gate Resistance R 0.6 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 18 ns d(on) Rise Time t 70 r V = 10 V, V = 48 V, GS DD I = 48 A, R = 2.5 D G TurnOff Delay Time t 35 d(off) Fall Time t 60 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.9 1.2 SD J V = 0 V, GS I = 48 A S T = 100C 0.75 J Reverse Recovery Time t 38 ns RR Charge Time ta 20 V = 0 V, dIs/dt = 100 A/ s, GS I = 48 A S Discharge Time tb 18 Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number Package Shipping NVD5862NT4G DPAK 2500 / Tape & Reel (PbFree) NVD5862NT4GVF01 DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2