NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features V R (on) Max I DSS DS D Max Low On-Resistance 16 m 10 V High Current Capability 60 V 21 m 4.5 V 60 A 100% Avalanche Tested 24 m 4 V AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252) ELECTRICAL CONNECTION Pb-Free, Halogen Free and RoHS compliance P-Channel Typical Applications 2,4 Reverse Battery Protection Load Switch Automotive Front Lighting Automotive Body Controllers 1 1 : Gate SPECIFICATIONS 2 : Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3 : Source 4 : Drain Parameter Symbol Value Unit 3 Drain to Source Voltage V 60 V DSS Gate to Source Voltage V 20 V GSS Drain Current (DC) 4 I 60 A D Drain Current (Pulse) I 180 A DP PW 10 s, duty cycle 1% 1 2 Power Dissipation P 72 W D ATPAK 3 Tc = 25C Operating Junction and Tj, Tstg 55 to +175 C Storage Temperature MARKING Avalanche Energy (Single Pulse) (Note 2) E 100 mJ AS Avalanche Current (Note 3) I 28 A AV Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : V = 15 V, L = 200 H, I = 28 A DD AV 3 : L 100 H, Single pulse THERMAL RESISTANCE RATINGS ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering and shipping information on page 6 of this data sheet. C/W Junction to Case Steady State (Tc = 25 C) R 2.0 JC Junction to Ambient (Note 4) R 79.6 C/W JA 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : September 2016 - Rev. 0 NVATS5A114PLZ/DNVATS5A114PLZ ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1 mA, V = 0 V V BR DSS D GS 60 I V = 60 V, V = 0 V Zero-Gate Voltage Drain Current DSS 1 A DS GS I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS V (th) Gate Threshold Voltage V = 10 V, I = 1 mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10 V, I = 28 A 65 S FS DS D R (on)1 I = 28 A, V = 10 V DS 12 16 m D GS Static Drain to Source On-State R (on)2 I = 14 A, V = 4.5 V 15 21 m DS D GS Resistance R (on)3 I = 7 A, V = 4 V 16.5 24 DS D GS m Input Capacitance Ciss 4,000 pF V = 20 V, f = 1 MHz Output Capacitance Coss 400 pF DS Reverse Transfer Capacitance Crss 315 pF t (on) Turn-ON Delay Time 19 ns d Rise Time t 200 ns r See Fig.1 t (off) Turn-OFF Delay Time d 450 ns t Fall Time 300 ns f Total Gate Charge Qg 92 nC Gate to Source Charge Qgs V = 30 V, V = 10 V, I = 55 A 15 nC DS GS D Gate to Drain Miller Charge Qgd 15.5 nC V I = 55 A, V = 0 V Forward Diode Voltage 0.95 1.5 V SD S GS Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2