MOSFET - Power, Single 2 N-Channel, D PAK 650 V, 82 m , 40 A NVB082N65S3F Description SUPERFET III MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX conduction loss, provide superior switching performance, and (BR)DSS DS(ON) D withstand extreme dv/dt rate. 650 V 82 m 10 V 40 A Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery D performance of body diode can remove additional component and improve system reliability. Features 700 V T = 150C J G Typ. R = 64 m DS(on) Ultra Low Gate Charge (Typ. Q = 81 nC) g S Low Effective Output Capacitance (Typ. C = 722 pF) oss(eff.) NCHANNEL MOSFET 100% Avalanche Tested Qualified with AECQ101 These Devices are PbFree and are RoHS Compliant D Typical Applications G Automotive On Board Charger S 2 D PAK3 Automotive DC/DC Converter for HEV TO263 CASE 418AJ MARKING DIAGRAM &Z&3&K NVB 082N65S3F &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVB082N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2020 Rev. 4 NVB082N65S3F/DNVB082N65S3F Table 1. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) C Symbol Parameter Value Unit V DraintoSource Voltage 650 V DSS V GatetoSource Voltage DC 30 V GS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 40 A D C Continuous (T = 100C) 25.5 C I Drain Current Pulsed (Note 1) 100 W DM E Single Pulse Avalanche Energy (Note 2) 510 mJ AS I Avalanche Current 4.8 A AS E Repeated Avalanche Energy (Note 1) 3.13 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation TC = 25C 313 W D Derate Above 25C 2.5 W/C T , T Operating Junction and Storage Temperature 55 to 150 C J stg T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. IAS = 4.8 A, RG = 25 , starting T = 25C. J 3. ISD 20 A, di/dt 200 A/ s, V 400 V, starting T = 25C. DD C Table 2. THERMAL RESISTANCE RATINGS Symbol Parameter Max Unit R Thermal Resistance, JunctiontoCase, Max. 0.40 C/W JC R Thermal Resistance, JunctiontoAmbient, Max. 40 JA www.onsemi.com 2