X-On Electronics has gained recognition as a prominent supplier of NVB5404NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVB5404NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVB5404NT4G ON Semiconductor

NVB5404NT4G electronic component of ON Semiconductor
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Part No.NVB5404NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET D2PK 40V 129A 4.5MOH
Datasheet: NVB5404NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.829 ea
Line Total: USD 2.83 
Availability - 685
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
685
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.829
10 : USD 2.4035
100 : USD 1.978
250 : USD 1.8975
500 : USD 1.817
800 : USD 1.6675
2400 : USD 1.61
4800 : USD 1.5525
9600 : USD 1.5065

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the NVB5404NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVB5404NT4G and other electronic components in the MOSFETs category and beyond.

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NTB5404N, NTP5404N, NVB5404N Power MOSFET 2 40 V, 167 A, Single NChannel, D PAK & TO220 Features www.onsemi.com Low R DS(on) High Current Capability I MAX D V R MAX (Note 1) (BR)DSS DS(ON) Low Gate Charge AECQ101 Qualified and PPAP Capable NVB5404N 40 V 4.5 m 10 V 167 A These Devices are PbFree and are RoHS Compliant D Applications Electronic Brake Systems NChannel Electronic Power Steering G Bridge Circuits S MAXIMUM RATINGS (T = 25C unless otherwise stated) J MARKING Parameter Symbol Value Units DIAGRAMS DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS 2 D PAK NTB5404NG Continuous Drain T = 25C I 167 A C D CASE 418B Steady 1 AYWW Current R JC 2 STYLE 2 State T = 100C 118 C 3 Power Dissipation Steady P 254 W D T = 25C C R State JC 1 4 Continuous Drain Steady T = 25C I 24 A A D Current R State JA T = 100C 17 (Note 1) A Power Dissipation Steady T = 25C P 5.4 W A D TO220AB R (Note 1) State JA CASE 221A NTP5404NRG STYLE 5 Pulsed Drain Current t = 10 s I 670 A p DM AYWW Operating Junction and Storage Temperature T , 55 to J C T 175 STG 1 2 3 Source Current (Body Diode) Pulsed I 75 A S G = PbFree Device A = Assembly Location Single Pulse Drainto Source Avalanche EAS 1000 mJ Y = Year Energy (V = 50 V, V = 10 V, I = 45 A, DD GS PK L = 1 mH, R = 25 ) WW = Work Week G Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 2 NTB5404NT4G D PAK 800 / Tape & Reel assumed, damage may occur and reliability may be affected. (PbFree) THERMAL RESISTANCE RATINGS NTP5404NRG TO220 50 Units / Rail Parameter Symbol Max Unit (PbFree) 2 NVB5404NT4G D PAK 800 / Tape & Reel JunctiontoCase (Drain) R 0.59 C/W JC (PbFree) JunctiontoAmbient (Note 1) R 50 C/W JA For information on tape and reel specifications, 1. Surface mounted on FR4 board using 1 sq in pad size, including part orientation and tape sizes, please (Cu Area 1.127 sq in 2 oz including traces). refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NTB5404N/DNTB5404N, NTP5404N, NVB5404N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 34 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 40 V DS T = 100C 10 J GatetoSource Leakage Current I V = 0 V, V = 30 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 V GS(TH) GS DS D Gate Threshold Temperature V /T 8.2 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 40 A 3.5 4.5 m DS(on) GS D V = 5.0 V, I = 15 A 5.1 7.0 GS D Forward Transconductance g V = 10 V, I = 15 A 35 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 4300 7000 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 1075 1700 OSS V = 32 V DS Reverse Transfer Capacitance C 450 1000 RSS Total Gate Charge Q 125 nC G(TOT) Threshold Gate Charge Q 5.5 G(TH) V = 10 V, V = 32 V, GS DS I = 40 A D GatetoSource Charge Q 12.5 GS GatetoDrain Charge Q 55 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 10 ns d(ON) Rise Time t 65 r V = 10 V, V = 32 V, GS DD I = 40 A, R = 2.5 D G TurnOff Delay Time t 85 d(OFF) Fall Time t 85 f SWITCHING CHARACTERISTICS, V = 5 V (Note 3) GS TurnOn Delay Time t 25 ns d(ON) Rise Time t 175 r V = 5 V, V = 20 V, GS DD I = 20 A, R = 2.5 D G TurnOff Delay Time t 46 d(OFF) Fall Time t 62 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.1 V SD J V = 0 V, GS I = 20 A S T = 125C 0.65 J Reverse Recovery Time t 75 ns RR Charge Time t 38 a V = 0 V, dI /dt = 100 A/ s, GS SD I = 20 A Discharge Time t S 38 b Reverse Recovery Charge Q 140 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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