MOSFET - SiC Power, Single N-Channel, D2PAK-7L 1200 V, 20 m , 98 A NVBG020N120SC1 Features www.onsemi.com Typ. R = 20 m DS(on) Ultra Low Gate Charge (typ. Q = 220 nC) G(tot) Low Effective Output Capacitance (typ. C = 258 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 28 m 20 V 98 A Qualified According to AECQ101 RoHS Compliant Drain (TAB) Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV Gate (Pin 1) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Driver Parameter Symbol Value Unit Source Power Source (Pin 2) (Pin 3, 4, 5, 6, 7) DraintoSource Voltage V 1200 V DSS NCHANNEL MOSFET GatetoSource Voltage V 15/+25 V GS Recommended Operation Val- T < 175C V 5/+20 V C GSop ues of GatetoSource Voltage Continuous Drain Steady T = 25C I 98 A C D Current (Note 2) State Power Dissipation P 468 W D (Note 2) D2PAK7L Continuous Drain Steady T = 25C I 8.6 A A D CASE 418BJ Current (Notes 1, 2) State Power Dissipation P 3.7 W D (Notes 1, 2) MARKING DIAGRAM Pulsed Drain Current T = 25C I 392 A A DM (Note 3) AYWWZZ NVBG Single Pulse Surge T = 25C, t = 10 s, I 807 A A p DSC 020120SC1 Drain Current Capa- R = 4.7 G bility A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Y = Year WW = Work Week Source Current (Body Diode) I 46 A S ZZ = Lot Traceability NVBG020120SC1 = Specific Device Code Single Pulse DraintoSource Avalanche E 264 mJ AS Energy (I = 23 A, L = 1 mH) (Note 4) L(pk) Maximum Lead Temperature for Soldering T 300 C L ORDERING INFORMATION (1/8 from case for 5 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NVBG020N120SC1 D2PAK7L 800 ea/ assumed, damage may occur and reliability may be affected. Tape&Reel 1. Surface mounted on a FR4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, For information on tape and reel specifications, they are not constants and are only valid for the particular conditions noted. including part orientation and tape sizes, please 3. Repetitive rating, limited by max junction temperature. refer to our Tape and Reel Packaging Specification 4. EAS of 264 mJ is based on starting T = 25C L = 1 mH, I = 23 A, J AS Brochure, BRD8011/D. V = 120 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2021 Rev. 4 NVBG020N120SC1/DNVBG020N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 0.32 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 41 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.5 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 20 mA 1.8 2.7 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 60 A, T = 25C 20 28 m DS(on) GS D J V = 20 V, I = 60 A, T = 175C 35 50 GS D J Forward Transconductance g V = 20 V, I = 60 A 34 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 2943 pF GS DS ISS Output Capacitance C 258 OSS Reverse Transfer Capacitance C 24 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 220 nC G(TOT) GS DS I = 80 A D Threshold Gate Charge Q 33 G(TH) GatetoSource Charge Q 66 GS GatetoDrain Charge Q 63 GD GateResistance R f = 1 MHz 1.6 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/20 V, 22 35 ns d(ON) GS V = 800 V, DS Rise Time t 20 32 r I = 80 A, D R = 2 TurnOff Delay Time t G 42 67 d(OFF) inductive load Fall Time t 9 18 f TurnOn Switching Loss E 461 J ON TurnOff Switching Loss E 400 OFF Total Switching Loss E 861 tot DRAINSOURCE DIODE CHARACTERISTICS V = 5 V, T = 25C A Continuous Drain Source Diode Forward I 46 SD GS J Current Pulsed DrainSource Diode Forward I 392 SDM Current (Note 3) Forward Diode Voltage V V = 5 V, I = 30 A, T = 25C 3.7 V SD GS SD J Reverse Recovery Time t V = 5/20 V, I = 80 A, 31 ns RR GS SD dI /dt = 1000 A/ s S Reverse Recovery Charge Q 228 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2