X-On Electronics has gained recognition as a prominent supplier of NVD3055-150T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD3055-150T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD3055-150T4G ON Semiconductor

NVD3055-150T4G electronic component of ON Semiconductor
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Part No.NVD3055-150T4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 60V .150R TR
Datasheet: NVD3055-150T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1099
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8268
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1141
10 : USD 0.9177
100 : USD 0.2914
500 : USD 0.2606
1000 : USD 0.2397
2500 : USD 0.2298
5000 : USD 0.2198
10000 : USD 0.2109
25000 : USD 0.2069
N/A

Obsolete
0
MOQ : 27
Multiples : 27
27 : USD 0.2872
50 : USD 0.2703
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NVD3055-150T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD3055-150T4G and other electronic components in the MOSFETs category and beyond.

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NTD3055-150, NVD3055-150 MOSFET Power, N-Channel, DPAK/IPAK 9.0 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 9.0 AMPERES, 60 VOLTS circuits. R = 122 m (Typ) DS(on) Features D NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable NChannel These Devices are PbFree and are RoHS Compliant G Typical Applications S Power Supplies Converters 4 Power Motor Controls 4 Bridge Circuits 1 2 1 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 3 Rating Symbol Value Unit DPAK IPAK CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS (SURFACE MOUNT) (STRAIGHT LEAD) DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR STYLE 2 STYLE 2 GatetoSource Voltage Vdc MARKING DIAGRAMS Continuous V 20 GS Nonrepetitive (t 10 ms) V 30 & PIN ASSIGNMENTS p GS Drain Current Adc 4 4 Continuous T = 25C I 9.0 Drain Drain A D Continuous T = 100C I 3.0 A D Single Pulse (t 10 s) I 27 Apk p DM Total Power Dissipation T = 25C P 28.8 W A D Derate above 25C 0.19 W/C Total Power Dissipation T = 25C (Note 1) 2.1 W A Total Power Dissipation T = 25C (Note 2) 1.5 W A 2 1 3 Operating and Storage Temperature Range T , T 55 to 175 C Drain J stg Gate Source 1 2 3 Single Pulse DraintoSource Avalanche E 30 mJ AS Gate Drain Source Energy Starting T = 25C J (V = 25 Vdc, V = 10 Vdc, DD GS A = Assembly Location* L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc) L DS 3150 = Device Code Thermal Resistance C/W Y = Year JunctiontoCase R 5.2 JC WW = Work Week JunctiontoAmbient (Note 1) 71.4 R JA G = PbFree Package JunctiontoAmbient (Note 2) 100 R JA * The Assembly Location code (A) is front side Maximum Lead Temperature for Soldering T 260 C L optional. In cases where the Assembly Location is Purposes, 1/8 from case for 10 seconds stamped in the package, the front side assembly Stresses exceeding those listed in the Maximum Ratings table may damage the code may be blank. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. When surface mounted to an FR4 board using 0.5 sq in pad size. See detailed ordering and shipping information in the package 2. When surface mounted to an FR4 board using minimum recommended dimensions section on page 5 of this data sheet. pad size. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 7 NTD3055150/D AYWW 3150G AYWW 3150GNTD3055150, NVD3055150 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS 60 (V = 0 Vdc, I = 250 Adc) GS D 70.2 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS 1.0 (V = 60 Vdc, V = 0 Vdc) DS GS 10 (V = 60 Vdc, V = 0 Vdc, T = 150C) DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) 2.0 3.0 4.0 (V = V , I = 250 Adc) DS GS D 6.4 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) 122 150 (V = 10 Vdc, I = 4.5 Adc) GS D Static DraintoSource OnVoltage (Note 3) V Vdc DS(on) 1.4 1.9 (V = 10 Vdc, I = 9.0 Adc) GS D 1.1 (V = 10 Vdc, I = 4.5 Adc, T = 150C) GS D J Forward Transconductance (Note 3) (V = 7.0 Vdc, I = 6.0 Adc) g 5.4 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 200 280 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 70 100 oss f = 1.0 MHz) Transfer Capacitance C 26 40 rss SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 11.2 25 d(on) (V = 48 Vdc, I = 9.0 Adc, Rise Time t 37.1 80 DD D r V = 10 Vdc, GS TurnOff Delay Time t 12.2 25 R = 9.1 ) (Note 3) d(off) G Fall Time t 23 50 f Gate Charge Q 7.1 15 nC T (V = 48 Vdc, I = 9.0 Adc, DS D Q 1.7 1 V = 10 Vdc) (Note 3) GS Q 3.5 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 9.0 Adc, V = 0 Vdc) (Note 3) V 0.98 1.20 Vdc S GS SD (I = 19 Adc, V = 0 Vdc, T = 0.86 S GS J 150C) Reverse Recovery Time t 28.9 ns rr (I = 9.0 Adc, V = 0 Vdc, S GS t 21.6 a dI /dt = 100 A/ s) (Note 3) S t 7.3 b Reverse Recovery Stored Charge Q 0.036 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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