X-On Electronics has gained recognition as a prominent supplier of NVD5413NT4G MOSFET across the USA, India, Europe, Australia, and various other global locations. NVD5413NT4G MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NVD5413NT4G ON Semiconductor

NVD5413NT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NVD5413NT4G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet: NVD5413NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.061 ea
Line Total: USD 152.5

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 0.061

0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 0.061

0
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1543
Multiples : 1543
1543 : USD 0.061

   
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We are delighted to provide the NVD5413NT4G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD5413NT4G and other electronic components in the MOSFET category and beyond.

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NTD5413N Power MOSFET 30 Amps, 60 Volts Single NChannel DPAK Features Low R DS(on) NTD5413N ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS DS D DraintoSource Breakdown Voltage Temper- V /T 67.5 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.0 A DSS GS J V = 60 V DS T = 150C 50 J GateBody Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 3.4 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 7.9 mV/C GS(th) J DraintoSource OnVoltage V V = 10 V, I = 20 A 0.37 0.52 V DS(on) GS D V = 10 V, I = 20 A, 150C 0.86 GS D DraintoSource OnResistance R V = 10 V, I = 20 A 18.5 26 m DS(on) GS D Forward Transconductance g V = 15 V, I = 20 A 36 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 25 V, V = 0 V, 1160 1725 pF iss DS GS f = 1 MHz Output Capacitance C 240 oss Transfer Capacitance C 100 rss Total Gate Charge Q V = 10 V, V = 48 V, 35 46 nC G(TOT) GS DS I = 20 A D Threshold Gate Charge Q 1.4 G(TH) GatetoSource Charge Q 6.5 GS GatetoDrain Charge Q 16.1 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t V = 10 V, V = 48 V, 11 ns d(on) GS DD I = 20 A, R = 2.5 D G Rise Time t 20 r Turn Off Delay Time t 28 d(off) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 2) V V = 0 V T = 25C 0.87 1.2 V SD GS J I = 20 A S T = 125C 0.8 J I = 20 A , V = 0 V , ns Reverse Recovery Time t 52 rr S dc GS dc dI /dt = 100 A/ s S Charge Time t 37 a Discharge Time t 15 b Reverse Recovery Stored Charge Q 105.7 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD5413NT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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