NVD5867NL Power MOSFET 60 V, 22 A, 39 m , Single NChannel Features Low R to Minimize Conduction Losses DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified AECQ101 Qualified and PPAP Capable V R I (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 39 m 10 V Compliant 60 V 22 A 50 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 22 A C D G rent R (Notes 1 & 3) JC T = 100C 16 C Steady State Power Dissipation R T = 25C P 43 W D JC C S (Note 1) NCHANNEL MOSFET T = 100C 21 C Continuous Drain Cur- T = 25C I 6.0 A A D 4 rent R (Notes 1, 2 & JA T = 100C 4.0 3) A Steady State Power Dissipation R T = 25C P 3.3 W 2 JA A D 1 (Notes 1 & 2) 3 T = 100C 1.7 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 85 A A p DM CASE 369AA STYLE 2 Current Limited by T = 25C I 30 A A Dmaxpkg Package (Note 3) MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg & PIN ASSIGNMENT 175 4 Source Current (Body Diode) I 36 A S Drain Single Pulse DraintoSource Avalanche E 18 mJ AS Energy (T = 25C, V = 50 V, V = 10 V, J DD GS I = 19 A, L = 0.1 mH, R = 25 ) L(pk) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 2 Stresses exceeding those listed in the Maximum Ratings table may damage the Drain 1 3 device. If any of these limits are exceeded, device functionality should not be Gate Source assumed, damage may occur and reliability may be affected. A = Assembly Location* THERMAL RESISTANCE MAXIMUM RATINGS Y = Year WW = Work Week Parameter Symbol Value Unit V5867L = Device Code JunctiontoCase (Drain) (Note 1) R 3.5 C/W JC G = PbFree Package JunctiontoAmbient Steady State (Note 2) 45 R JA * The Assembly Location code (A) is front side 1. The entire application environment impacts the thermal resistance values shown, optional. In cases where the Assembly Location is they are not constants and are only valid for the particular conditions noted. stamped in the package, the front side assembly 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. code may be blank. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2016 Rev. 4 NVD5867NL/D AYWW V58 67LGNVD5867NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 60 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 11 A 26 39 m DS(on) GS D V = 4.5 V, I = 11 A 33 50 GS D Forward Transconductance g V = 15 V, I = 11 A 8.0 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 675 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 68 oss V = 25 V DS Reverse Transfer Capacitance C 47 rss nC Total Gate Charge Q 15 G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 10 V, V = 48 V, GS DS I = 22 A GatetoSource Charge Q D 2.2 GS GatetoDrain Charge Q 4.3 GD Total Gate Charge Q V = 4.5 V, V = 48 V, 7.6 nC G(TOT) GS DS I = 22 A D Gate Resistance R 1.3 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 6.5 ns d(on) Rise Time t 12.6 r V = 10 V, V = 48 V, GS DD I = 22 A, R = 2.5 TurnOff Delay Time t D G 18.2 d(off) Fall Time t 2.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.78 J Reverse Recovery Time t 17 ns RR Charge Time ta 13 V = 0 V, dIs/dt = 100 A/ s, GS I = 22 A Discharge Time tb S 4.0 Reverse Recovery Charge Q 12 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2