NVD5890N Power MOSFET 40 V, 123 A, Single NChannel DPAK Features Low R to Minimize Conduction Losses DS(on) MSL 1/260C www.onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R I (BR)DSS DS(on) D Compliant 40 V 3.7 m 10 V 123 A Applications Motor Drivers D Pump Drivers for Automotive Braking, Steering and Other High Current Systems NChannel MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS S GatetoSource Voltage V 20 V GS 4 Continuous Drain Cur- T = 25C I 123 A C D rent (R ) JC T = 85C 95 C 2 1 Power Dissipation T = 25C P 107 W C D 3 (R ) JC Steady CASE 369C State Continuous Drain Cur- T = 25C I 24 A A D DPAK rent (R ) (Note 1) JA (Bent Lead) T = 85C 18.5 A STYLE 2 Power Dissipation T = 25C P 4.0 W A D (R ) (Note 1) JA MARKING DIAGRAMS Pulsed Drain Current t =10 s T = 25C I 400 A p A DM & PIN ASSIGNMENT Current Limited by Package T = 25C I 100 A A DmaxPkg 4 Operating Junction and Storage Temperature T , T 55 to C J stg Drain 175 Source Current (Body Diode) I 100 A S Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse DraintoSource Avalanche En- E 240 mJ AS ergy (V = 32 V, V = 10 V, 2 DD GS Drain L = 0.3 mH, I = 40 A, R = 25 ) 1 3 L(pk) G Gate Source Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) A = Assembly Location* Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. 5890N = Device Code G = PbFree Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2017 Rev. 2 NVD5890N/D AYWW 58 90NGNVD5890N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 1.4 C/W JC JunctiontoAmbient Steady State (Note 1) R 37 JA JunctiontoAmbient Steady State (Note 2) R 76 JA 2 1. Surfacemounted on FR4 board using 650 mm pad size, 2 oz Cu. 2 2. Surfacemounted on FR4 board using 36 mm pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 40 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V /T 40 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 7.4 mV/C GS(TH) J efficient DraintoSource On Resistance R V = 10 V, I = 50 A 2.9 3.7 m DS(on) GS D Forward Transconductance gFS V = 15 V, I = 15 A 16.8 S DS D CHARGES AND CAPACITANCES Input Capacitance C 4975 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 785 oss V = 12 V DS Reverse Transfer Capacitance C 490 rss Input Capacitance C V = 0 V, f = 1.0 MHz, 4760 pF iss GS V = 25 V DS Output Capacitance C 580 oss Reverse Transfer Capacitance C 385 rss nC Total Gate Charge Q 74 100 G(TOT) Threshold Gate Charge Q 5.0 G(TH) V = 10 V, V = 15 V, GS DS I = 50 A D GatetoSource Charge Q 17 GS GatetoDrain Charge Q 16 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 14 ns d(on) Rise Time t 55 r V = 10 V, V = 20 V, GS DS I = 50 A, R = 2.0 D G TurnOff Delay Time t 35 d(off) Fall Time t 7.0 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2