MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N Channel SC 70/SOT323 These miniature surface mount MOSFETs low R assure DS(on) MMBF2201N, NVF2201N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 20 Vdc (BR)DSS (V = 0 Vdc, I = 10 A) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 16 Vdc, V = 0 Vdc) 1.0 DS GS (V = 16 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 1.0 1.7 2.4 Vdc GS(th) (V = V , I = 250 Adc) DS GS D Static DraintoSource OnResistance r DS(on) (V = 10 Vdc, I = 300 mAdc) 0.75 1.0 GS D (V = 4.5 Vdc, I = 100 mAdc) 1.0 1.4 GS D Forward Transconductance (V = 10 Vdc, I = 200 mAdc) g 450 mMhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (V = 5.0 V) C 45 pF DS iss Output Capacitance (V = 5.0 V) C 25 DS oss Transfer Capacitance (V = 5.0 V) C 5.0 DG rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 2.5 ns d(on) Rise Time t 2.5 r (V = 15 Vdc, I = 300 mAdc, DD D R = 50 ) L Turn Off Delay Time t 15 d(off) Fall Time t 0.8 f Gate Charge (See Figure 5) Q 1400 pC T SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current I 0.3 A S Pulsed Current I 0.75 SM Forward Voltage (Note 3) V 0.85 V SD 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. TYPICAL CHARACTERISTICS 1.0 1.6 0.9 1.4 V = 4 V GS 0.8 1.2 0.7 V = 4.5 V GS 1.0 0.6 I = 100 mA D V = 3.5 V GS 0.5 0.8 V = 10 V GS 0.4 I = 300 mA 0.6 D V = 3 V 0.3 GS 0.4 0.2 V = 2.5 V GS 0.2 0.1 0 0 0812 3 4 5 67910 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 V , DRAIN - SOURCE VOLTAGE (VOLTS) TEMPERATURE (C) DS Figure 1. Typical Drain Characteristics Figure 2. On Resistance versus Temperature