NTF3055-100, NVF3055-100 MOSFET Power, N-Channel, SOT-223 3.0 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. R = 110 m DS(on) Features NVF Prefix for Automotive and Other Applications Requiring NChannel Unique Site and Control Change Requirements AECQ101 D Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications G Power Supplies Converters S Power Motor Controls MARKING Bridge Circuits DIAGRAM 4 & PIN MAXIMUM RATINGS (T = 25C unless otherwise noted) C ASSIGNMENT 1 Rating Symbol Value Unit Drain 2 4 3 DraintoSource Voltage V 60 Vdc DSS SOT223 DraintoGate Voltage (R = 10 M ) V 60 Vdc CASE 318E DGR AWW GS STYLE 3 3055 GatetoSource Voltage Continuous V 20 Vdc GS Nonrepetitive (t 10 ms) 30 Vpk p 1 2 3 Drain Current Gate Drain Source Continuous T = 25C I 3.0 Adc A D A = Assembly Location Continuous T = 100C I 1.4 A D WW = Work Week Single Pulse (t 10 s) I 9.0 Apk p DM 3055 = Specific Device Code Total Power Dissipation T = 25C (Note 1) P 2.1 W A D = PbFree Package 1.3 W Total Power Dissipation T = 25C (Note 2) A (Note: Microdot may be in either location) 0.014 W/C Derate above 25C ORDERING INFORMATION Operating and Storage Temperature Range T , T 55 C J stg to 175 Device Package Shipping Single Pulse DraintoSource Avalanche E 74 mJ AS 1000 / Tape & Energy Starting T = 25C NTF3055100T1G SOT223 J (V = 25 Vdc, V = 10 Vdc, Reel (PbFree) DD GS I (pk) = 7.0 Apk, L = 3.0 mH, V = 60 Vdc) L DS NTF3055100T3G SOT223 4000 / Tape & Thermal Resistance C/W (PbFree) Reel JunctiontoAmbient (Note 1) 72.3 R JA JunctiontoAmbient (Note 2) 114 R JA NVF3055100T1G SOT223 1000 / Tape & Maximum Lead Temperature for Soldering T 260 C (PbFree) Reel L Purposes, 1/8 from case for 10 seconds For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage including part orientation and tape sizes, please the device. If any of these limits are exceeded, device functionality should not refer to our Tape and Reel Packaging Specifications be assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 1.127 sq in). 2. When surface mounted to an FR4 board using minimum recommended pad size, 22.4 oz. (Cu. Area 0.272 sq in). Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 5 NTF3055100/DNTF3055100, NVF3055100 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS 60 68 (V = 0 Vdc, I = 250 Adc) GS D 66 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current I 100 nAdc GSS (V = 20 Vdc, V = 0 Vdc) GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) 2.0 3.0 4.0 (V = V , I = 250 Adc) DS GS D 6.6 mV/C Threshold Temperature Coefficient (Negative) R m Static DraintoSource OnResistance (Note 3) DS(on) 88 110 (V = 10 Vdc, I = 1.5 Adc) GS D V Vdc Static DraintoSource OnResistance (Note 3) DS(on) 0.27 0.40 (V = 10 Vdc, I = 3.0 Adc) GS D 0.24 (V = 10 Vdc, I = 1.5 Adc, T = 150C) GS D J Forward Transconductance (Note 3) g 3.2 Mhos fs (V = 8.0 Vdc, I = 1.7 Adc) DS D DYNAMIC CHARACTERISTICS Input Capacitance C 324 455 pF iss (V = 25 Vdc, V = 0 V, DS GS Output Capacitance C 35 50 oss f = 1.0 MHz) Transfer Capacitance C 110 155 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.4 20 ns d(on) (V = 30 Vdc, I = 3.0 Adc, Rise Time t 14 30 DD D r V = 10 Vdc, GS TurnOff Delay Time t 21 45 R = 9.1 ) (Note 3) d(off) G Fall Time t 13 30 f Gate Charge Q 10.6 22 nC T (V = 48 Vdc, I = 3.0 Adc, DS D Q 1.9 1 V = 10 Vdc) (Note 3) GS Q 4.2 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 3.0 Adc, V = 0 Vdc) V Vdc S GS SD (I = 3.0 Adc, V = 0 Vdc, 0.89 1.0 S GS T = 150C) (Note 3) 0.74 J Reverse Recovery Time t 30 ns rr t 22 a (I = 3.0 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) (Note 3) S t 8.6 b Reverse Recovery Stored Charge Q 0.04 C RR 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2