MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 20 m , 102 A NVH4L020N120SC1 Features Typ. R = 20 m www.onsemi.com DS(on) Ultra Low Gate Charge (Q = 220 nC) G(tot) High Speed Switching with Low Capacitance (C = 258 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 28 m 20 V 102 A AECQ101 Qualified and PPAP Capable This Device is PbFree and is RoHS Compliant D Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV G Automotive Traction Inverter S1: Kelvin Source MAXIMUM RATINGS (T = 25C unless otherwise noted) S2: Power Source J S1 S2 Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V 15/+25 V GS Recommended Operation Values T < 175C V 5/+20 V C GSop of GatetoSource Voltage Steady T = 25C Continuous Drain I 102 A C D Current (Note 2) State D Power Dissipation P 510 W S2 D S1 (Note 2) G TO2474L Steady T = 100C Continuous Drain I 84 A C D CASE 340CJ Current (Notes 1, 2) State Power Dissipation P 255 W D MARKING DIAGRAM (Notes 1, 2) Pulsed Drain Current T = 25C I 408 A A DM (Note 3) Single Pulse Surge T = 25C, t = 10 s, I 807 A A p DSC Drain Current Capability R = 4.7 AYWWZZ G NVH4L020 Operating Junction and Storage Temperature T , T 55 to C J stg N120SC1 Range +175 Source Current (Body Diode) I 46 A S Single Pulse DraintoSource Avalanche E 264 mJ AS Energy (I = 23 A, L = 1 mH) (Note 4) L(pk) A = Assembly Location Maximum Lead Temperature for Soldering T 300 C L Y = Year (1/8 from case for 5 s) WW = Work Week ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NVH4L020N120SC1 = Specific Device Code assumed, damage may occur and reliability may be affected. 1. JA is constant value to follow guide table of LV/HV discrete final datasheet ORDERING INFORMATION generation. 2. The entire application environment impacts the thermal resistance values shown, Device Package Shipping they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. NVH4L020N120SC1 TO2474L 30 ea / 4. EAS of 264 mJ is based on starting T = 25C L = 1 mH, I = 23 A, Tube J AS V = 120 V, V = 18 V. DD GS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2021 Rev. 3 NVH4L020N120SC1/DNVH4L020N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 0.3 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.5 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 20 mA 1.8 2.7 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 60 A, T = 25C 20 28 m DS(on) GS D J V = 20 V, I = 60 A, T = 175C 37 50 GS D J Forward Transconductance g V = 20 V, I = 60 A 36 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 2943 pF ISS GS DS Output Capacitance C 258 OSS Reverse Transfer Capacitance C 24 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 220 nC G(TOT) GS DS I = 80 A D Threshold Gate Charge Q 33 G(TH) GatetoSource Charge Q 66 GS GatetoDrain Charge Q 63 GD GateResistance R f = 1 MHz 1.6 G SWITCHING CHARACTERISTICS, VGS = 10 V TurnOn Delay Time t V = 5/20 V, 21.6 35 ns d(ON) GS V = 800 V, DS Rise Time t 21 34 r I = 80 A, D R = 2 G TurnOff Delay Time t 41 66 d(OFF) inductive load Fall Time t 10 20 f TurnOn Switching Loss E 494 J ON TurnOff Switching Loss E 397 OFF Total Switching Loss E 891 tot DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 46 A SD GS J Current Pulsed DrainSource Diode Forward I 408 SDM Current (Note 3) Forward Diode Voltage V V = 5 V, I = 30 A, T = 25C 3.7 V SD GS SD J www.onsemi.com 2