Green DMP45H4D9HK3 450V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) Max High BV Rating for Power Application T = +25C DSS C -450V -4.7A Low Input/Output Leakage 4.9 V = -10V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance and yet Mechanical Data maintain superior switching performance, making it ideal for high Case: TO252 (DPAK) efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (Approximate) Power Management Functions Uninterrupted Power Supply TO252 (DPAK) D D G S Top View Internal Schematic Top View Pin Out Ordering Information (Note 4) Part Number Case Packaging DMP45H4D9HK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP45H4D9HK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit -450 Drain-Source Voltage V V DSS 30 Gate-Source Voltage V V GSS Steady T = +25C C Continuous Drain Current (Note 5) V = -10V I A GS D State T = +100C C Maximum Body Diode Forward Current (Note 5) A I S Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) A I DM Avalanche Current, L = 60mH (Note 7) A I AS Avalanche Energy, L = 60mH (Note 7) mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit TC = +25C Total Power Dissipation (Note 5) P W D 41 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) R JA C/W Thermal Resistance, Junction to Case (Note 5) R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -450 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -450V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -3.0 -4.0 -5.0 V V V = V , I = -250A GS(TH) DS GS D 3.1 Static Drain-Source On-Resistance R 4.9 V = -10V, I = -1.05A DS(ON) GS D Diode Forward Voltage V -1.4 V V = 0V, I = -2.1A SD GS S Forward Transconductance gfs 1.4 S V = -50.0V, I = -1.05A DS D DYNAMIC CHARACTERISTICS (Note 7) 564 Input Capacitance C iss 70 Output Capacitance C pF V = -25V, V = 0V, f = 1.0MHz oss DS GS 3.3 Reverse Transfer Capacitance C rss 13.7 Total Gate Charge (VGS = -10V) Qg Gate-Source Charge 3.4 nC Q V = -360V, I = -2.7A, V = -10V gs DS D GS Gate-Drain Charge 6.0 Q gd Turn-On Delay Time 21 t D(ON) Turn-On Rise Time 54 t R ns V = -225V, R = 3.0, I = -2.7A DD G D 34 Turn-Off Delay Time t D(OFF) 34 Turn-Off Fall Time t F 168 Body Diode Reverse Recovery Time t ns RR V = 0V, V = -200V, I = -2.7A, GS DD S 1.3 dI/dt = 100A/s Body Diode Reverse Recovery Charge Q C RR Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMP45H4D9HK3 June 2017 Diodes Incorporated www.diodes.com Document number: DS38850 Rev. 2 - 2 NEW PRODUCT