X-On Electronics has gained recognition as a prominent supplier of NVH4L160N120SC1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVH4L160N120SC1 SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

NVH4L160N120SC1 ON Semiconductor

NVH4L160N120SC1 electronic component of ON Semiconductor
NVH4L160N120SC1 ON Semiconductor
NVH4L160N120SC1 SiC MOSFETs
NVH4L160N120SC1  Semiconductors

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See Product Specifications
Part No. NVH4L160N120SC1
Manufacturer: ON Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-4L
Datasheet: NVH4L160N120SC1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.6692 ea
Line Total: USD 15.67 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 450
Multiples : 450
450 : USD 16.4315

0
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 15.6692
10 : USD 15.0705
30 : USD 14.0343
100 : USD 13.1304

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 9.5783
10 : USD 8.3027
25 : USD 7.9216
100 : USD 6.8788
450 : USD 5.9764
900 : USD 5.4349

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVH4L160N120SC1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVH4L160N120SC1 and other electronic components in the SiC MOSFETs category and beyond.

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The NVH4L160N120SC1 with MOSFET SIC MOS TO247-4L from ON Semiconductors is an industrial-grade four-layer Metal Oxide Semiconductor Field Effect Transistor (MOSFET) packaged in a TO-247-4L plastic package. It has an operating voltage of 1200V, a drain-source on-state resistance of 160mO and is RoHS compliant. The part is suitable for high power, low loss and high speed switching applications, such as motor control, automotive applications, SMPS and white+goods, where a high level of control is required due to the high current switching ability. Additionally, this model offers improved noise immunity against transient voltage spikes, is suited for various temperature environments and features a low gate-charge as well.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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