MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m , 17.3 A NTH4L160N120SC1 Features Typ. R = 160 m www.onsemi.com DS(on) Ultra Low Gate Charge (Q = 34 nC) G(tot) High Speed Switching with Low Capacitance (C = 49.5 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested 1200 V 224 m 20 V 17.3 A T = 175C J This Device is PbFree and is RoHS Compliant D Typical Applications UPS DC/DC Converter G Boost Inverter S1: Kelvin Source MAXIMUM RATINGS (T = 25C unless otherwise noted) S2: Power Source J S1 S2 Parameter Symbol Value Unit NCHANNEL MOSFET DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V 15/+25 V GS Recommended Operation Values T < 175C V 5/+20 V C GSop of GatetoSource Voltage Steady T = 25C Continuous Drain I 17.3 A C D Current (Note 2) State D Power Dissipation P 111 W S2 D S1 (Note 2) G TO2474L Steady T = 100C Continuous Drain I 12.3 A C D CASE 340CJ Current (Notes 1, 2) State Power Dissipation P 55.5 W D MARKING DIAGRAM (Notes 1, 2) Pulsed Drain Current T = 25C I 69 A A DM (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 AYWWZZ NTH4L160 Source Current (Body Diode) I 11 A S N120SC1 Single Pulse DraintoSource Avalanche E 128 mJ AS Energy (I = 16 A, L = 5 mH) (Note 4) L(pk) Maximum Lead Temperature for Soldering T 300 C L (1/8 from case for 5 s) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. ZZ = Lot Traceability 1. JA is constant value to follow guide table of LV/HV discrete final datasheet NTH4L160N120SC1 = Specific Device Code generation . 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 3. Repetitive rating, limited by max junction temperature. Device Package Shipping 4. EAS of 128 mJ is based on starting T = 25C L = 5 mH, I = 16 A, J AS V = 120 V, V = 18 V. DD GS NTH4L160N120SC1 TO2474L 30 ea / Tube Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 3 NTH4L160N120SC1/DNTH4L160N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State (Note 2) R 1.35 C/W JC JunctiontoAmbient Steady State (Notes 1, 2) R 40 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, referenced to 25C 0.6 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 2.5 mA 1.8 3.1 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 12 A, T = 25C 160 224 m DS(on) GS D J V = 20 V, I = 12 A, T = 175C 271 377 GS D J Forward Transconductance g V = 20 V, I = 12 A 3.2 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 800 V 665 pF ISS GS DS Output Capacitance C 49.5 OSS Reverse Transfer Capacitance C 4.3 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 34 nC G(TOT) GS DS I = 16 A D Threshold Gate Charge Q 6 G(TH) GatetoSource Charge Q 12.5 GS GatetoDrain Charge Q 9.6 GD GateResistance R f = 1 MHz 1.4 G SWITCHING CHARACTERISTICS, VGS = 10 V TurnOn Delay Time t V = 5/20 V, 11 20 ns d(ON) GS V = 800 V, DS Rise Time t 10 20 r I = 16 A, D R = 6 G TurnOff Delay Time t 14 25 d(OFF) inductive load Fall Time t 7 14 f TurnOn Switching Loss E 104 J ON TurnOff Switching Loss E 32 OFF Total Switching Loss E 136 tot DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 11 A SD GS J Current Pulsed DrainSource Diode Forward I 69 SDM Current (Note 3) Forward Diode Voltage V V = 5 V, I = 6 A, T = 25C 4 V SD GS SD J V = 5/20 V, I = 16 A, Reverse Recovery Time t 15 ns RR GS SD dI /dt = 1000 A/ s S Reverse Recovery Charge Q 47 nC RR www.onsemi.com 2