D1 M NTHD3101F MOSFET Power, P-Channel, Schottky Diode, ChipFET, FETKY, Schottky Barrier Diode NTHD3101F SCHOTTKY DIODE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Units Average Rectified Steady I 2.2 V F Forward Current State T = 25C J t 5 s 4.1 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). THERMAL RESISTANCE RATINGS Parameter Symbol Max Units JunctiontoAmbient Steady State (Note 2) R 113 C/W JA JunctiontoAmbient t 10 s (Note 2) R 60 C/W JA 2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 16 V, V = 0 V DS GS T = 125C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.5 V GS(TH) GS DS D Gate Threshold V /T 2.7 mV/C GS(TH) J Temperature Coefficient DraintoSource OnResistance R m V = 4.5, I = 3.2 A 64 80 DS(on) GS D V = 2.5, I = 2.2 A 85 110 GS D V = 1.8, I = 1.0 A 120 170 GS D Forward Transconductance g V = 10 V, I = 2.9 A 8.0 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 680 ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 100 OSS V = 10 V DS Reverse Transfer Capacitance C 70 RSS Total Gate Charge Q 7.4 nC G(TOT) Threshold Gate Charge Q 0.6 G(TH) V = 4.5 V, V = 10 V, GS DS I = 3.2 A GatetoSource Charge Q D 1.4 GS GatetoDrain Charge Q 2.5 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 5.8 ns d(ON) Rise Time t 11.7 r V = 4.5 V, V = 10 V, GS DD I = 3.2 A, R = 2.4 TurnOff Delay Time t D G 16 d(OFF) Fall Time t 12.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 2.5 A T = 25C 0.8 1.2 V SD GS S J