A2 M NTHS5404T1 MOSFET Power, N-Channel, ChipFET 20 V, 7.2 A Features NTHS5404T1 THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Maximum JunctiontoAmbient (Note 2) R C/W JA 40 50 t 5 sec 80 95 Steady State Maximum JunctiontoFoot (Drain) R 15 20 C/W JF Steady State ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit DYNAMIC (Note 4) nC Total Gate Charge Q 12 18 G V = 10 V, V = 4.5 V, DS GS GateSource Charge Q 2.4 GS I = 5.2 A D GateDrain Charge Q 3.2 GD pF Input Capacitance C 740 ISS V = 16 V, V = 0 V, DS GS Output Capacitance C 337 OSS f = 1.0 MHz Reverse Transfer Capacitance C 88 RSS TurnOn Delay Time t 8.0 15 ns d(on) V = 10 V, R = 10 Rise Time t 7.0 15 DD L r I 1.0 A, V = 4.5 V, D GEN TurnOff Delay Time t 50 60 d(off) R = 6 G Fall Time t 28 40 f STATIC DraintoSource Breakdown Voltage V V = V , I = 250 A 20 25.1 V (BR)DSS DS GS D (Note 3) DraintoSource Breakdown Voltage V /T 18.4 mV/C (BR)DSS J Temperature Coefficient Gate Threshold Voltage V V = V , I = 250 A 0.6 V GS(th) DS GS D GateBody Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS Zero Gate Voltage Drain Current I V = 16 V, V = 0 V 1.0 A DSS DS GS V = 16 V, V = 0 V, 5.0 DS GS T = 85C J OnState Drain Current (Note 3) I V 5.0 V, V = 4.5 V 20 A D(on) DS GS DrainSource OnState Resistance r V = 4.5 V, I = 5.2 A 0.025 0.030 DS(on) GS D (Note 3) V = 2.5 V, I = 4.3 A 0.038 0.045 GS D Forward Transconductance (Note 3) g V = 10 V, I = 5.2 A 20 S fs DS D DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 3) V V = 0 V, I = 5.2 A 0.8 1.2 V SD GS S Reverse Recovery Time t 20.9 ns rr Charge Time t 10.2 a V = 0 V, I = 5.2 A, GS S di /dt = 100 A/ s S Discharge Time t 10.6 b Reverse Recovery Time Q 11 nC rr 2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing.