X-On Electronics has gained recognition as a prominent supplier of NTJD4152PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD4152PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTJD4152PT1G ON Semiconductor

NTJD4152PT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTJD4152PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V 0.88mA P-Channel ESD Protection
Datasheet: NTJD4152PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.132 ea
Line Total: USD 0.66 
Availability - 4440
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
152
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 9
Multiples : 1
9 : USD 0.5924
13 : USD 0.3972
25 : USD 0.3935
100 : USD 0.1466

23280
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1279

4440
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.132
50 : USD 0.1057
150 : USD 0.0926
500 : USD 0.0828
3000 : USD 0.0737
6000 : USD 0.0698

152
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 53
Multiples : 1
53 : USD 0.142

37830
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1238

5820
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1733
6000 : USD 0.1692
9000 : USD 0.1665
12000 : USD 0.1637
27000 : USD 0.1588

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTJD4152PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4152PT1G and other electronic components in the MOSFETs category and beyond.

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The NTJD4152PT1G is a type of Semiconductor device manufactured by ON Semiconductor. It is a P-Channel Enhancement Mode MOSFET designed to provide ESD protection for low voltage applications. It has a drain-source voltage rating of 20V and a continuous drain current rating of 0.88mA. This type of MOSFET is a versatile device used to control the flow of current within the circuit and can be used for DC-DC converters, load switch and other power management systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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