X-On Electronics has gained recognition as a prominent supplier of NTJD4152PT1G MOSFET across the USA, India, Europe, Australia, and various other global locations. NTJD4152PT1G MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NTJD4152PT1G ON Semiconductor

NTJD4152PT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTJD4152PT1G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET 20V 0.88mA P-Channel ESD Protection
Datasheet: NTJD4152PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1746 ea
Line Total: USD 0.87

Availability - 3133
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
574
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5931
10 : USD 0.4629
25 : USD 0.4584
100 : USD 0.2574
250 : USD 0.2548
500 : USD 0.1509

104760
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1494
9000 : USD 0.1338

3133
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1746
50 : USD 0.139
150 : USD 0.1239
500 : USD 0.1049
3000 : USD 0.0964
6000 : USD 0.0913

574
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 53
Multiples : 1
53 : USD 0.4729
100 : USD 0.2656
250 : USD 0.2628
500 : USD 0.1557

104760
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1542
9000 : USD 0.138

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTJD4152PT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4152PT1G and other electronic components in the MOSFET category and beyond.

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The NTJD4152PT1G is a type of Semiconductor device manufactured by ON Semiconductor. It is a P-Channel Enhancement Mode MOSFET designed to provide ESD protection for low voltage applications. It has a drain-source voltage rating of 20V and a continuous drain current rating of 0.88mA. This type of MOSFET is a versatile device used to control the flow of current within the circuit and can be used for DC-DC converters, load switch and other power management systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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