X-On Electronics has gained recognition as a prominent supplier of NTJD4152PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD4152PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTJD4152PT1G ON Semiconductor

NTJD4152PT1G electronic component of ON Semiconductor
NTJD4152PT1G ON Semiconductor
NTJD4152PT1G MOSFETs
NTJD4152PT1G  Semiconductors

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See Product Specifications
Part No. NTJD4152PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V 0.88mA P-Channel ESD Protection
Datasheet: NTJD4152PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1955 ea
Line Total: USD 0.98 
Availability - 7178
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5972
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 88
Multiples : 1
88 : USD 0.7419
140 : USD 0.4657
141 : USD 0.4612
292 : USD 0.223
294 : USD 0.2209
500 : USD 0.2181
1000 : USD 0.1955
3000 : USD 0.1645
6000 : USD 0.141

7178
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ : 5
Multiples : 5
5 : USD 0.1955
50 : USD 0.1543
150 : USD 0.1147
500 : USD 0.0913
3000 : USD 0.0806
6000 : USD 0.0758

5972
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 141
Multiples : 1
141 : USD 0.4612
292 : USD 0.223
294 : USD 0.2209
500 : USD 0.2181
1000 : USD 0.1955
3000 : USD 0.1645
6000 : USD 0.141

49470
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1379
9000 : USD 0.1344
24000 : USD 0.1325
45000 : USD 0.123

5820
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1657
6000 : USD 0.1618
9000 : USD 0.1601
12000 : USD 0.1591
27000 : USD 0.156

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTJD4152PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4152PT1G and other electronic components in the MOSFETs category and beyond.

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The NTJD4152PT1G is a type of Semiconductor device manufactured by ON Semiconductor. It is a P-Channel Enhancement Mode MOSFET designed to provide ESD protection for low voltage applications. It has a drain-source voltage rating of 20V and a continuous drain current rating of 0.88mA. This type of MOSFET is a versatile device used to control the flow of current within the circuit and can be used for DC-DC converters, load switch and other power management systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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