X-On Electronics has gained recognition as a prominent supplier of NTJD5121NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD5121NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTJD5121NT1G ON Semiconductor

NTJD5121NT1G electronic component of ON Semiconductor
NTJD5121NT1G ON Semiconductor
NTJD5121NT1G MOSFETs
NTJD5121NT1G  Semiconductors

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See Product Specifications
Part No. NTJD5121NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SC88D 60V 295mA
Datasheet: NTJD5121NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0721 ea
Line Total: USD 0.72 
Availability - 4311
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
66930
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.048
6000 : USD 0.0461
12000 : USD 0.0454
27000 : USD 0.0442
51000 : USD 0.0426
102000 : USD 0.0415
150000 : USD 0.0409
252000 : USD 0.0403

4311
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0721
100 : USD 0.0589
300 : USD 0.0522
3000 : USD 0.0417
6000 : USD 0.0378
9000 : USD 0.0357

1702
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.406
10 : USD 0.2422
50 : USD 0.1602
100 : USD 0.1354
231 : USD 0.0742
633 : USD 0.0702
3000 : USD 0.0687
6000 : USD 0.0672

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
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Transistor Type
Width
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We are delighted to provide the NTJD5121NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD5121NT1G and other electronic components in the MOSFETs category and beyond.

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NTJD5121N, NVJD5121N MOSFET Power, Dual, N-Channel With ESD Protection, SC-88 60 V, 295 mA wwwwww..onsemi.comonsemi.com Features Low R DS(on) V R MAX I Max (BR)DSS DS(on) D Low Gate Threshold 1.6 10 V Low Input Capacitance 295 mA 60 V 2.5 4.5 V ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 (SOT363) PPAP Capable This is a PbFree Device S 1 6 D 1 1 Applications Low Side Load Switch G 2 5 G 1 2 DCDC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 4 S 2 2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS Top View GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 295 mA MARKING DIAGRAM & A D Current (Note 1) State PIN ASSIGNMENT T = 85C 212 A D1 G2 S2 t 5 s T = 25C 304 A 6 1 T = 85C 219 A XX M SC88/SOT363 Power Dissipation Steady T = 25C P 250 mW A D CASE 419B (Note 1) State STYLE 26 1 t 5 s 266 S1 G1 D2 Pulsed Drain Current t = 10 s I 900 mA p DM XX = Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J STG 150 = PbFree Package (Note: Microdot may be in either location) Source Current (Body Diode) I 210 mA S Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information ion page 6 of GateSource ESD Rating (HBM) ESD 2000 V HBM this data sheet. GateSource ESD Rating (MM) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTJD5121N/DNTJD5121N, NVJD5121N Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State R 467 JA JunctiontoAmbient t 5 s R 412 JA JunctiontoLead Steady State R 252 JL 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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