NTJD5121NT1G ON Semiconductor

NTJD5121N, NVJD5121N MOSFET Power, Dual, N-Channel With ESD Protection, SC-88 60 V, 295 mA wwwwww..onsemi.comonsemi.com Features Low R DS(on) V R MAX I Max (BR)DSS DS(on) D Low Gate Threshold 1.6 10 V Low Input Capacitance 295 mA 60 V 2.5 4.5 V ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 (SOT363) PPAP Capable This is a PbFree Device S 1 6 D 1 1 Applications Low Side Load Switch G 2 5 G 1 2 DCDC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 4 S 2 2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS Top View GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 295 mA MARKING DIAGRAM & A D Current (Note 1) State PIN ASSIGNMENT T = 85C 212 A D1 G2 S2 t 5 s T = 25C 304 A 6 1 T = 85C 219 A XX M SC88/SOT363 Power Dissipation Steady T = 25C P 250 mW A D CASE 419B (Note 1) State STYLE 26 1 t 5 s 266 S1 G1 D2 Pulsed Drain Current t = 10 s I 900 mA p DM XX = Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J STG 150 = PbFree Package (Note: Microdot may be in either location) Source Current (Body Diode) I 210 mA S Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information ion page 6 of GateSource ESD Rating (HBM) ESD 2000 V HBM this data sheet. GateSource ESD Rating (MM) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTJD5121N/DNTJD5121N, NVJD5121N Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State R 467 JA JunctiontoAmbient t 5 s R 412 JA JunctiontoLead Steady State R 252 JL 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2