NTK3043N MOSFET Power, N-Channel with ESD Protection, SOT-723 20 V, 285 mA www.onsemi.com Features Enables High Density PCB Manufacturing V R TYP I Max (BR)DSS DS(on) D 44% Smaller Footprint than SC89 and 38% Thinner than SC89 1.5 4.5 V Low Voltage Drive Makes this Device Ideal for Portable Equipment 2.4 2.5 V Low Threshold Levels, V < 1.3 V 20 V 285 mA GS(TH) 5.1 1.8 V Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin 6.8 1.65 V Environments such as Portable Electronics Operated at Standard Logic Level Gate Drive, Facilitating Future Top View Migration to Lower Levels Using the Same Basic Topology These are PbFree and HalogenFree Devices 3 Applications Interfacing, Switching High Speed Switching Cellular Phones, PDAs MAXIMUM RATINGS (T = 25C unless otherwise stated) J 12 Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS 1 Gate 2 Source GatetoSource Voltage V 10 V GS 3 Drain Continuous Drain Steady T = 25C 255 A Current (Note 1) State T = 85C 185 A I mA D MARKING t 5 s T = 25C 285 A DIAGRAM Power Dissipation Steady 440 (Note 1) State T = 25C P mW A D t 5 s 545 KA SOT723 Continuous Drain T = 25C I 210 A D CASE 631AA Current (Note 2) mA 1 STYLE 5 T = 85C 155 Steady A State Power Dissipation T = 25C P 310 A D mW KA = Device Code (Note 2) M = Date Code Pulsed Drain Current I 400 mA t = 10 s p DM Operating Junction and Storage Temperature T , T 55 to C J STG ORDERING INFORMATION 150 Device Package Shipping Source Current (Body Diode) (Note 2) I 286 mA S NTK3043NT1G SOT723* 4000 / Tape & Reel Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 seconds) NTK3043NT5G SOT723* 8000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 1. Surfacemounted on FR4 board using 1 in sq pad size refer to our Tape and Reel Packaging Specification (Cu area = 1.127 in sq 1 oz including traces) Brochure, BRD8011/D. 2. Surfacemounted on FR4 board using the minimum recommended pad size. *These packages are inherently PbFree. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2019 Rev. 5 NTK3043N/D MNTK3043N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 280 JA JunctiontoAmbient t = 5 s (Note 3) R 228 C/W JA JunctiontoAmbient Steady State Minimum Pad (Note 4) R 400 JA 3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Condition Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 100 A V 20 V GS D (BR)DSS DraintoSource Breakdown Voltage I = 100 A, Reference to 25C V /T 27 D (BR)DSS J mV/C Temperature Coefficient Zero Gate Voltage Drain Current V = 0 V, T = 25C I 1 GS J DSS V = 16 V A DS T = 125C 10 J GatetoSource Leakage Current V = 0 V, V = 5 V I 1 A DS GS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V 0.4 1.3 V GS(TH) V = V , I = 250 A GS DS D Gate Threshold Temperature Coefficient V /T 2.4 mV/C GS(TH) J DraintoSource On Resistance V = 4.5V, I = 10 mA R 1.5 3.4 GS D DS(ON) V = 4.5V, I = 255 mA 1.6 3.8 GS D V = 2.5 V, I = 1 mA 2.4 4.5 GS D V = 1.8 V, I = 1 mA 5.1 10 GS D V = 1.65 V, I = 1 mA 6.8 15 GS D Forward Transconductance V = 5 V, I = 100 mA g 0.275 S DS D FS Gate Resistance T = 25C R 2.2 k A G CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 11 ISS Output Capacitance C 8.3 V = 0 V, f = 1 MHz, V = 10 V pF OSS GS DS Reverse Transfer Capacitance C 2.7 RSS SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4) TurnOn Delay Time t 13 d(ON) Rise Time t 15 r V = 4.5 V, V = 5 V, I = 10 mA, GS DD D ns R = 6 G TurnOff Delay Time t 94 d(OFF) Fall Time t 55 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage T = 25C V 0.83 1.2 J SD V = 0 V, I = 286 mA V GS S T = 125C 0.69 J Reverse Recovery Time t 9.1 RR Charge Time t 7.1 ns a V = 0 V, V = 20 V, dISD/dt = 100 A/ s, GS DD I = 286 mA S Discharge Time t 2.0 b Reverse Recovery Charge Q 3.7 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2