Preliminary Datasheet RJK0354DSP REJ03G1661-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 05, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 5.4 m typ. (at V = 10 V) DS(on) GS Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 56 7 8 5 D D DD 6 7 8 1, 2, 3 Source 4 4 3 2 G 4 Gate 1 5, 6, 7, 8 Drain SS S 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 16 A D Note1 Drain peak current I 128 A D(pulse) Body-drain diode reverse drain current I 16 A DR Note 2 Avalanche current I 15 A AP Note 2 Avalanche energy E 22.5 mJ AR Note3 Channel dissipation Pch 2.0 W Note3 Channel to ambient thermal impedance ch-a 62.5 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s REJ03G1661-0200 Rev.2.00 Page 1 of 6 Apr 05, 2010 RJK0354DSP Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 5.4 7.0 m I = 8 A, V = 10 V DS(on) D GS Note4 resistance R 7.5 10.5 m I = 8 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 40 S I = 8 A, V = 10 V fs D DS Input capacitance Ciss 1740 pF V = 10 V DS V = 0 GS Output capacitance Coss 335 pF f = 1 MHz Reverse transfer capacitance Crss 110 pF Gate Resistance Rg 4.4 Total gate charge Qg 12 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 4.3 nC I = 16 A D Gate to drain charge Qgd 2.5 nC Turn-on delay time t 7.4 ns V = 10 V, I = 8 A d(on) GS D V 10 V Rise time t 3.6 ns DD r R = 1.25 L Turn-off delay time t 56.4 ns d(off) Rg = 4.7 Fall time t 5.5 ns f Note4 Bodydrain diode forward voltage V 0.81 1.06 V I = 16 A, V = 0 DF F GS Bodydrain diode reverse recovery t 20 ns I = 16 A, V = 0 rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test REJ03G1661-0200 Rev.2.00 Page 2 of 6 Apr 05, 2010