X-On Electronics has gained recognition as a prominent supplier of RJK0391DPA-00#J5A MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJK0391DPA-00#J5A MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJK0391DPA-00#J5A Renesas

RJK0391DPA-00#J5A electronic component of Renesas
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Part No.RJK0391DPA-00#J5A
Manufacturer: Renesas
Category: MOSFETs
Description: MOSFET BEAM Series FET, 30V, WPAK, Pb Free, HF
Datasheet: RJK0391DPA-00#J5A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5065 ea
Line Total: USD 1.51 
Availability - 4805
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4805
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5065
10 : USD 1.5065
3000 : USD 0.9625
9000 : USD 0.9614

   
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We are delighted to provide the RJK0391DPA-00#J5A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJK0391DPA-00#J5A and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RJK0391DPA 30V, 50A, 2.9m max. R07DS0923EJ0400 N Channel Power MOS FET Rev.4.00 High Speed Power Switching Mar 21, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 56 7 8 D DD D 6 7 8 5 4 1, 2, 3 Source 4 Gate G 1 4 3 2 5, 6, 7, 8 Drain SS S 12 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 50 A D Note1 Drain peak current I 200 A D(pulse) Body-drain diode reverse drain current I 50 A DR Note 2 Avalanche current I 25 A AP Note 2 Avalanche energy E 62.5 mJ AR Note3 Channel dissipation Pch 50 W Note3 Channel to case thermal impedance ch-c 2.5 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0923EJ0400 Rev.4.00 Page 1 of 6 Mar 21, 2013 RJK0391DPA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.5 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 2.2 2.9 m I = 25 A, V = 10 V DS(on) D GS Note4 resistance R 2.8 3.9 m I = 25 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 160 S I = 25 A, V = 10 V fs D DS Input capacitance Ciss 5600 pF V = 10 V DS V = 0 GS Output capacitance Coss 710 pF f = 1 MHz Reverse transfer capacitance Crss 370 pF Gate Resistance Rg 0.95 Total gate charge Qg 34 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 16 nC I = 50 A D Gate to drain charge Qgd 7.4 nC Turn-on delay time t 15.3 ns V = 10 V, I = 25 A d(on) GS D V 10 V Rise time t 8 ns DD r R = 0.4 L Turn-off delay time t 66 ns d(off) Rg = 4.7 Fall time t 14.1 ns f Note4 Bodydrain diode forward voltage V 0.80 1.04 V I = 50 A, V = 0 DF F GS Bodydrain diode reverse recovery t 35 ns I =50 A, V = 0 rr F GS time di / dt = 100 A/ s F Notes: 4. Pulse test R07DS0923EJ0400 Rev.4.00 Page 2 of 6 Mar 21, 2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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