IPD50R399CP TM CoolMOS Power Transistor Product Summary Features V T 550 V DS jmax Lowest figure of merit R x Q ON g R 0.399 W DS(on),max Ultra low gate charge Q 17 nC g,typ Extreme dv/dt rated High peak current capability Pb-free lead plating RoHS compliant, Halogen free 1) Fully qualified according to JEDEC for Industrial Applications PG-TO252 CoolMOS CP is designed for: Hard and softswitching SMPS topologies DCM PFC for Lamp Ballast PWM for Lamp Ballast & PDP and LCD TV Type Package Marking IPD50R399CP PG-TO252 5R399P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 9 A D C T =100C 6 C 2) I T =25C 20 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.3A, V =50V 215 mJ AS D DD 2),3) E I =3.3A, V =50V Avalanche energy, repetitive t 0.33 AR D DD AR 2),3) I 3.3 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...400V 50 V/ns DS Gate source voltage V static 20 V GS 30 AC (f>1 Hz) P T =25C 83 Power dissipation W tot C Operating and storage temperature T , T -55 ... 150 C j stg Rev. 2.3 page 1 2020-05-10 IPD50R399CP Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous diode forward current I 4.9 A S T =25C C 2) I 20 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.5 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold reflowsoldering from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 500 - - V (BR)DSS GS D V V =V , I =0.33mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =500V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =500V, V =0V, DS GS - 10 - T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =10V, I =4.9A, GS D R Drain-source on-state resistance - 0.36 0.399 W DS(on) T =25C j V =10V, I =4.9A, GS D - 0.90 - T =150C j R Gate resistance f =1MHz, open drain - 2.2 - W G Rev. 2.3 page 2 2020-05-10