X-On Electronics has gained recognition as a prominent supplier of IPD50R399CPATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD50R399CPATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD50R399CPATMA1 Infineon

IPD50R399CPATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPD50R399CPATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Datasheet: IPD50R399CPATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1989 ea
Line Total: USD 1.2 
Availability - 485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
485
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1989
10 : USD 1.0248
25 : USD 1.0145
100 : USD 0.8636
250 : USD 0.855
500 : USD 0.6967

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
On-State Resistance
Drain Current
Power Dissipation
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We are delighted to provide the IPD50R399CPATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD50R399CPATMA1 and other electronic components in the MOSFETs category and beyond.

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IPD50R399CP TM CoolMOS Power Transistor Product Summary Features V T 550 V DS jmax Lowest figure of merit R x Q ON g R 0.399 W DS(on),max Ultra low gate charge Q 17 nC g,typ Extreme dv/dt rated High peak current capability Pb-free lead plating RoHS compliant, Halogen free 1) Fully qualified according to JEDEC for Industrial Applications PG-TO252 CoolMOS CP is designed for: Hard and softswitching SMPS topologies DCM PFC for Lamp Ballast PWM for Lamp Ballast & PDP and LCD TV Type Package Marking IPD50R399CP PG-TO252 5R399P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 9 A D C T =100C 6 C 2) I T =25C 20 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.3A, V =50V 215 mJ AS D DD 2),3) E I =3.3A, V =50V Avalanche energy, repetitive t 0.33 AR D DD AR 2),3) I 3.3 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...400V 50 V/ns DS Gate source voltage V static 20 V GS 30 AC (f>1 Hz) P T =25C 83 Power dissipation W tot C Operating and storage temperature T , T -55 ... 150 C j stg Rev. 2.3 page 1 2020-05-10 IPD50R399CP Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous diode forward current I 4.9 A S T =25C C 2) I 20 Diode pulse current S,pulse 4) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.5 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold reflowsoldering from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 500 - - V (BR)DSS GS D V V =V , I =0.33mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =500V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =500V, V =0V, DS GS - 10 - T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =10V, I =4.9A, GS D R Drain-source on-state resistance - 0.36 0.399 W DS(on) T =25C j V =10V, I =4.9A, GS D - 0.90 - T =150C j R Gate resistance f =1MHz, open drain - 2.2 - W G Rev. 2.3 page 2 2020-05-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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