X-On Electronics has gained recognition as a prominent supplier of BSZ180P03NS3EGATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ180P03NS3EGATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ180P03NS3EGATMA1 Infineon

BSZ180P03NS3EGATMA1 electronic component of Infineon
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See Product Specifications
Part No.BSZ180P03NS3EGATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Datasheet: BSZ180P03NS3EGATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.2292 ea
Line Total: USD 1146 
Availability - 14550
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
4811
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2729
10 : USD 0.2622
25 : USD 0.2597
100 : USD 0.2474
250 : USD 0.2469
500 : USD 0.2462
1000 : USD 0.2456
3000 : USD 0.2451

4840
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 118
Multiples : 1
118 : USD 0.3445
200 : USD 0.3429

4811
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 32
Multiples : 1
32 : USD 0.2597
100 : USD 0.2474
250 : USD 0.2469
500 : USD 0.2462
1000 : USD 0.2456
3000 : USD 0.2451

14550
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.2292
10000 : USD 0.228
15000 : USD 0.2277

460750
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 5000
Multiples : 5000
5000 : USD 0.3222

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSZ180P03NS3EGATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ180P03NS3EGATMA1 and other electronic components in the MOSFETs category and beyond.

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Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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