Preliminary Datasheet RJK03M5DNS R07DS0769EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 29, 2012 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 5.2 m typ. (at V = 10 V) DS(on) GS Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 56 7 8 D DD D 6 7 8 5 4 1, 2, 3 Source G 4 Gate 1 2 4 3 5, 6, 7, 8 Drain SS S 12 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 25 A D Note1 Drain peak current I 100 A D(pulse) Body-drain diode reverse drain current I 25 A DR Note 2 Avalanche current I 10.5 A AP Note 2 Avalanche energy E 11 mJ AS Note3 Channel dissipation Pch 15 W Note3 Channel to case thermal impedance ch-c 8.3 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0769EJ0110 Rev.1.10 Page 1 of 6 May 29, 2012 RJK03M5DNS Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.5 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 24 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 5.2 6.3 m I = 12.5 A, V = 10 V DS(on) D GS Note4 resistance R 6.4 8.4 m I = 12.5 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 60 S I = 12.5 A, V = 5 V fs D DS Input capacitance Ciss 1350 1890 pF V = 10 V DS V = 0 GS Output capacitance Coss 220 pF f = 1 MHz Reverse transfer capacitance Crss 120 pF Gate Resistance Rg 1.4 2.8 Total gate charge Qg 10.4 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 4.0 nC I = 25 A D Gate to drain charge Qgd 3.1 nC Turn-on delay time t 3.7 ns V = 10 V, I = 12.5 A d(on) GS D V 10 V Rise time t 3.0 ns DD r R = 0.8 L Turn-off delay time t 21.7 ns d(off) Rg = 4.7 Fall time t 7.0 ns f Note4 Bodydrain diode forward voltage V 0.85 1.11 V I = 25 A, V = 0 DF F GS Bodydrain diode reverse recovery t 8.8 ns I =25 A, V = 0 rr F GS time di / dt = 500 A/ s F Notes: 4. Pulse test R07DS0769EJ0110 Rev.1.10 Page 2 of 6 May 29, 2012