TM TM Polar3 HiPerFET V = 600V IXFA7N60P3 DSS Power MOSFET I = 7A IXFP7N60P3 D25 R 1.15 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 600 V TO-220 (IXFP) DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C7A D25 C S D (Tab) I T = 25 C, Pulse Width Limited by T 16 A DM C JM G = Gate D = Drain I T = 25 C 3.5 A A C S = Source Tab = Drain E T = 25 C 400 mJ AS C dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J P T = 25 C 180 W D C Features T -55 ... +150 C J T 150 C JM International Standard Packages T -55 ... +150 C stg Fast Intrinsic Rectifier Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low R and Q T Plastic Body for 10s 260 C DS(ON) G SOLD Low Package Inductance M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Advantages Weight TO-263 2.5 g TO-220 3.0 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 1mA 600 V Power Supplies DSS GS D DC-DC Converters V V = V , I = 1mA 3.0 5.0 V GS(th) DS GS D Laser Drivers AC and DC Motor Drives I V = 30V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 125 A J R V = 10V, I = 0.5 I , Note 1 1.15 DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100428B(6/18) IXFA7N60P3 IXFP7N60P3 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 4 7 S fs DS D D25 R Gate Input Resistance 6.0 Gi C 705 pF iss C V = 0V, V = 25V, f = 1MHz 84 pF oss GS DS C 4.5 pF rss Pins: t 13 ns d(on) Resistive Switching Times 1 - Gate t 12 ns 2,4 - Drain r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 3 - Source t 27 ns d(off) R = 10 (External) G t 10 ns f Q 13.3 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 3.7 nC gs GS DS DSS D D25 Q 5.1 nC gd R 0.69 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 7 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 28 A SM JM E A oP A1 V I = I , V = 0V, Note 1 1.4 V SD F S GS H1 Q D D2 t 250 ns rr I = 7A, -di/dt = 25A/ s F Q 0.36 C D1 RM V = 100V R I 2.60 A E1 RM A2 EJECTOR L1 L ee c 3X b e1e1 Note 1. Pulse test, t 300 s, duty cycle, d 2%. 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537