MKE38RK600DFELB IXYS

Isolated surface to heatsink MKE 38RK600DFELB 1) V = 600 V DSS CoolMOS Power MOSFET I = 50 A D25 ISOPLUS - electrically isolated surface to heatsink R = 45 mW DS(on) max Surface Mount Power Device K D Preliminary data T D G KS S A E72873 Features MOSFET T 1) Fast CoolMOS Symbol Conditions Maximum Ratings th power MOSFET 4 generation V T = 25C to 150C 600 V DSS VJ - high blocking capability - lowest resistance V 20 V GS - avalanche rated for unclamped I T = 25C 50 A D25 C inductive switching (UIS) I T = 80C 38 A D80 C - low thermal resistance E single pulse 1950 mJ due to reduced chip thickness AS I = 11 A T = 25C D C E repetitive 3 mJ AR Package - isolated surface to heatsink dV/dt MOSFET dV/dt ruggedness V = 0...480 V 50 V/ns DS - low coupling capacity between pins and heatsink Symbol Conditions Characteristic Values - PCB space saving (T = 25C, unless otherwise specified) VJ - enlarged creepage towards heatsink min. typ. max. - application friendly pinout - low inductive current path R I = 44 A V = 10 V 40 45 m DSon D GS - high reliability V I = 3 mA V = V 2.5 3 3.5 V GS(th) D DS GS Applications I V = V V = 0 V T = 25C 10 A DSS DS DSS GS VJ T = 125C 50 A Buck / boost chopper VJ Optimized for boost configuration I V = 0 V V = 20 V 100 nA GSS DS GS PFC stage t 80 ns d(on) t 40 ns r 1) CoolMOS is a trademark of Inductive switching t 750 ns d(off) Infineon Technologies AG. boost mode with diode D t 40 ns f V = 380 V I = 30 A DS D E 1.3 mJ on V = 10 V R = 33 GS G E 0.45 mJ off E 0.35 mJ rec C 6800 pF iss V = 0 V V = 100 V f = 1 MHz GS DS C 320 pF oss Q 150 190 nC g V = 400 V I = 44 A DS D Q 35 nC gs V = 10 V R = 3.3 GS G Q 50 nC gd R 0.4 K/W thJC R with heatsink compound (IXYS test setup) tbd tbd K/W thJH 20111102a 2011 IXYS All rights reserved 1 - 6 K D A 3x S G KS nc MKE 38RK600DFELB Source-Drain Diode of MOSFET T Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 50 A S25 C I T = 80C 38 A S80 C Symbol Conditions Characteristic Values I R 0 (T = 25C, unless otherwise specified) VJ V 0 min. typ. max. V I = 44 A V = 0 V 0.9 1.0 V SD F GS Boost Diode (typ. at T = 125C) J t 600 ns V = tbd V R = tbd mW rr 0 0 Q I = 44 A -di /dt = 100 A/s V = 400 V 17 C RM F F R I 60 A RM Diode D Symbol Conditions Maximum Ratings I T = 25C DC 96 A F25 C I T = 80C DC 61 A F80 C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V T = 25C 600 V RRM VJ V I = 25 A T = 25C 1.2 1.4 V F F VJ T = 125C 1.3 VJ I V = V T = 25C 150 A R R RRM VJ T = 125C tbd mA VJ I I = 30 A V = 350 V T = 100C 10 A RM F R VJ -di/dt = 240 A/s t I = 1 A V = 30 V T = 100C 35 50 ns rr F R VJ -di/dt = 100 A/s R per diode 0.7 K/W thJC R with heatsink compound (IXYS test setup) tbd k/W thJH Component Symbol Conditions Maximum Ratings T -55...+150 C VJ T -55...+125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force 40 ... 130 N C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted 90 pF P pins and backside metal d d pin - pin 1.65 mm S, A d d pin - backside metal 4 mm S, A CTI 400 Weight 8 g Delivering Base Ordering Ordering Part Number Marking on Product Mode Qty Code Standard MKE38RK600DFELB-TRR MKE38RK600DFELB Tape & Reel 200 510479 MKE38RK600DFELB MKE38RK600DFELB Blister 45 510231 20111102a 2011 IXYS All rights reserved 2 - 6