Preliminary Datasheet RJK03M1DPA 30V, 50A, 2.3m max. R07DS0765EJ0200 N Channel Power MOS FET Rev.2.00 High Speed Power Switching Feb 08, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 56 7 8 D DD D 6 7 8 5 4 1, 2, 3 Source 4 Gate G 1 4 3 2 5, 6, 7, 8 Drain SS S 12 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 50 A D Note1 Drain peak current I 200 A D(pulse) Body-drain diode reverse drain current I 50 A DR Note 2 Avalanche current I 21 A AP Note 2 Avalanche energy E 44.1 mJ AS Note3 Channel dissipation Pch 45 W Note3 Channel to case thermal impedance ch-c 2.8 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0765EJ0200 Rev.2.00 Page 1 of 6 Feb 08, 2013 RJK03M1DPA Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.5 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 24 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 1.9 2.3 m I = 25 A, V = 10 V DS(on) D GS Note4 resistance R 2.4 3.1 m I = 25 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 130 S I = 25 A, V = 5 V fs D DS Input capacitance Ciss 3370 4720 pF V = 10 V DS V = 0 GS Output capacitance Coss 560 pF f = 1 MHz Reverse transfer capacitance Crss 315 pF Gate Resistance Rg 1.5 3.0 Total gate charge Qg 25.0 nC V = 10 V DD V = 4.5 V GS Gate to source charge Qgs 9.2 nC I = 50 A D Gate to drain charge Qgd 7.1 nC Turn-on delay time t 6.1 ns V = 10 V, I = 25 A d(on) GS D V 10 V Rise time t 4.4 ns DD r R = 0.4 L Turn-off delay time t 57.5 ns d(off) Rg = 4.7 Fall time t 18.4 ns f Note4 Bodydrain diode forward voltage V 0.81 1.05 V I = 50 A, V = 0 DF F GS Bodydrain diode reverse recovery t 9.8 ns I =50 A, V = 0 rr F GS time di / dt = 500 A/ s F Notes: 4. Pulse test R07DS0765EJ0200 Rev.2.00 Page 2 of 6 Feb 08, 2013