X-On Electronics has gained recognition as a prominent supplier of RJK60S3DPP-E0#T2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJK60S3DPP-E0#T2 MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJK60S3DPP-E0#T2 Renesas

RJK60S3DPP-E0#T2 electronic component of Renesas
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Part No.RJK60S3DPP-E0#T2
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Datasheet: RJK60S3DPP-E0#T2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
98: USD 4.4429 ea
Line Total: USD 435.4 
Availability - 0
MOQ: 98  Multiples: 98
Pack Size: 98
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 98
Multiples : 98
98 : USD 4.4429

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 16
Multiples : 1
16 : USD 1.5605

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Brand
Gate-Source Voltage Max
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Drain-Source On-Volt
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We are delighted to provide the RJK60S3DPP-E0#T2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJK60S3DPP-E0#T2 and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RJK60S3DPP-E0 R07DS0637EJ0300 600V - 12A - SJ MOS FET Rev.3.00 High Speed Power Switching Oct 12, 2012 Features Superjunction MOSFET Low on-resistance R = 0.35 typ. (at I = 6 A, V = 10 V, Ta = 25 C) DS(on) D GS High speed switching t = 21 ns typ. (at I = 6 A, V = 10 V, R = 50 , Rg = 10 , Ta = 25 C) f D GS L Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 600 V DSS Gate to source voltage V +30, 20 V GSS Note1,2 Drain current Tc = 25C I 12.0 A D Note1,2 Tc = 100C I 7.6 A D Note1 Drain peak current I 24 A D (pulse) Note1 Body-drain diode reverse drain current I 12 A DR Note1 Body-drain diode reverse drain peak current I 24 A DR (pulse) Note3 Avalanche current I 3 A AP Note3 Avalanche energy E 0.49 mJ AR Note4 Channel dissipation Pch 27.7 W Channel to case thermal impedance ch-c 4.5 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Limited by Tch max. 2. Maximum duty cycle D = 0.75 3. STch = 25 C, Tch 150C 4. Value at Tc = 25C R07DS0637EJ0300 Rev.3.00 Page 1 of 7 Oct 12, 2012 RJK60S3DPP-E0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 600 V I = 10 mA, V = 0 (BR)DSS D GS Zero gate voltage drain current I 1 mA V = 600 V, V = 0 DSS DS GS Gate to source leak current I 0.1 A V = +30V, 20 V, V = 0 GSS GS DS Gate to source cutoff voltage V 3 5 V V = 10 V, I = 1 mA GS(off) DS D Note5 Static drain to source on state R 0.35 0.44 I = 6 A, V = 10 V DS(on) D GS resistance R 0.87 Ta = 150C DS(on) Note5 I = 6 A, V = 10 V D GS Gate resistance Rg 2.5 f = 1 MHz V = 25 V, V = 0 DS GS Input capacitance Ciss 720 pF V = 25 V DS V = 0 GS Output capacitance Coss 980 pF f = 100 kHz Reverse transfer capacitance Crss 3.7 pF Turn-on delay time t 13 ns I = 6 A d(on) D V = 10 V Rise time t 18 ns GS r R = 50 L Turn-off delay time t 25 ns d(off) Note5 Rg = 10 Fall time t 18 ns f Total gate charge Qg 13.6 nC V = 480 V DD V = 10 V Gate to source charge Qgs 4.8 nC GS Note5 I = 12 A D Gate to drain charge Qgd 3.9 nC Note5 Body-drain diode forward voltage V 1.0 1.6 V I = 12 A, V = 0 DF F GS Body-drain diode reverse recovery time t 320 ns I = 12 A rr F V = 0 Body-drain diode reverse recovery I 20 A GS rr Note5 di /dt = 100 A/ s current F Body-drain diode reverse recovery Q 3.7 C rr charge Notes: 5. Pulse test R07DS0637EJ0300 Rev.3.00 Page 2 of 7 Oct 12, 2012

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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