Preliminary Datasheet RJK60S3DPP-E0 R07DS0637EJ0300 600V - 12A - SJ MOS FET Rev.3.00 High Speed Power Switching Oct 12, 2012 Features Superjunction MOSFET Low on-resistance R = 0.35 typ. (at I = 6 A, V = 10 V, Ta = 25 C) DS(on) D GS High speed switching t = 21 ns typ. (at I = 6 A, V = 10 V, R = 50 , Rg = 10 , Ta = 25 C) f D GS L Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 600 V DSS Gate to source voltage V +30, 20 V GSS Note1,2 Drain current Tc = 25C I 12.0 A D Note1,2 Tc = 100C I 7.6 A D Note1 Drain peak current I 24 A D (pulse) Note1 Body-drain diode reverse drain current I 12 A DR Note1 Body-drain diode reverse drain peak current I 24 A DR (pulse) Note3 Avalanche current I 3 A AP Note3 Avalanche energy E 0.49 mJ AR Note4 Channel dissipation Pch 27.7 W Channel to case thermal impedance ch-c 4.5 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Limited by Tch max. 2. Maximum duty cycle D = 0.75 3. STch = 25 C, Tch 150C 4. Value at Tc = 25C R07DS0637EJ0300 Rev.3.00 Page 1 of 7 Oct 12, 2012 RJK60S3DPP-E0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 600 V I = 10 mA, V = 0 (BR)DSS D GS Zero gate voltage drain current I 1 mA V = 600 V, V = 0 DSS DS GS Gate to source leak current I 0.1 A V = +30V, 20 V, V = 0 GSS GS DS Gate to source cutoff voltage V 3 5 V V = 10 V, I = 1 mA GS(off) DS D Note5 Static drain to source on state R 0.35 0.44 I = 6 A, V = 10 V DS(on) D GS resistance R 0.87 Ta = 150C DS(on) Note5 I = 6 A, V = 10 V D GS Gate resistance Rg 2.5 f = 1 MHz V = 25 V, V = 0 DS GS Input capacitance Ciss 720 pF V = 25 V DS V = 0 GS Output capacitance Coss 980 pF f = 100 kHz Reverse transfer capacitance Crss 3.7 pF Turn-on delay time t 13 ns I = 6 A d(on) D V = 10 V Rise time t 18 ns GS r R = 50 L Turn-off delay time t 25 ns d(off) Note5 Rg = 10 Fall time t 18 ns f Total gate charge Qg 13.6 nC V = 480 V DD V = 10 V Gate to source charge Qgs 4.8 nC GS Note5 I = 12 A D Gate to drain charge Qgd 3.9 nC Note5 Body-drain diode forward voltage V 1.0 1.6 V I = 12 A, V = 0 DF F GS Body-drain diode reverse recovery time t 320 ns I = 12 A rr F V = 0 Body-drain diode reverse recovery I 20 A GS rr Note5 di /dt = 100 A/ s current F Body-drain diode reverse recovery Q 3.7 C rr charge Notes: 5. Pulse test R07DS0637EJ0300 Rev.3.00 Page 2 of 7 Oct 12, 2012