X-On Electronics has gained recognition as a prominent supplier of RJK60S5DPK-M0#T0 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJK60S5DPK-M0#T0 MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJK60S5DPK-M0#T0 Renesas

RJK60S5DPK-M0#T0 electronic component of Renesas
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Part No.RJK60S5DPK-M0#T0
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-3PSG Tube
Datasheet: RJK60S5DPK-M0#T0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
23: USD 18.6713 ea
Line Total: USD 429.44 
Availability - 0
MOQ: 23  Multiples: 23
Pack Size: 23
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 23
Multiples : 23
23 : USD 18.6713

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 9
Multiples : 1
9 : USD 3.7852
10 : USD 2.7529

   
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We are delighted to provide the RJK60S5DPK-M0#T0 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJK60S5DPK-M0#T0 and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0500 600V - 20A - SJ MOS FET Rev.5.00 High Speed Power Switching Jan 23, 2013 Features Superjunction MOSFET Low on-resistance R = 0.150 typ. (at I = 10 A, V = 10 V, Ta = 25 C) DS(on) D GS High speed switching t = 23 ns typ. (at I = 10 A, V = 10 V, R = 30 , Rg = 10 , Ta = 25 C) f D GS L Outline RENESAS Package code: PRSS0004ZH-A (Package name:TO-3PSG) D 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 600 V DSS Gate to source voltage V +30, 20 V GSS Note1 Drain current Tc = 25C I 20 A D) Note1 Tc = 100C I 12.6 A D) Note1 Drain peak current I 40 A D (pulse) Note1 Body-drain diode reverse drain current I 20 A DR Note1 Body-drain diode reverse drain peak current I 40 A DR (pulse) Note2 Avalanche current I 5 A AP Note2 Avalanche energy E 1.36 mJ AR Note3 MOSFET dv/dt ruggedness dv/dt 150 V/ns Note4 Channel dissipation Pch 192.3 W Channel to case thermal impedance ch-c 0.65 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Limited by Tch max. 2. STch = 25 C, Tch 150C 3. Value at Tj = 25C, V 480 V DS 4. Value at Tc = 25C R07DS0245EJ0500 Rev.5.00 Page 1 of 7 Jan 23, 2013 RJK60S5DPK-M0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max UnitTest conditions Drain to source breakdown voltage V 600 V I = 10 mA, V = 0 (BR)DSS D GS Zero gate voltage drain current I 1 mAV = 600 V, V = 0 DSS DS GS Gate to source leak current I 0.1 AV = +30V, 20 V, V = 0 GSS GS DS Gate to source cutoff voltage V 3 5 V V = 10 V, I = 1 mA GS(off) DS D Note5 Static drain to source on state R 0.150 0.178 I = 10 A, V = 10 V DS(on) D GS resistance R 0.375 Ta = 150C DS(on Note5 I = 10 A, V = 10 V D GS Gate resistance Rg 2.5 f = 1 MHz V = 25 V, V = 0 DS GS Input capacitance Ciss 1600 pF V = 25 V DS V = 0 GS Output capacitance Coss 2160 pF f = 100kHz Reverse transfer capacitance Crss 8.2 pF Turn-on delay time t 23 ns I = 10 A d(on) D V = 10 V Rise time t 25 ns GS r R = 30 L Turn-off delay time t 49 ns d(off) Note5 Rg = 10 Fall time t 23 ns f Total gate charge Qg 27 nC V = 480 V DD V = 10 V Gate to source charge Qgs 10.5 nC GS Note5 I = 20 A D Gate to drain charge Qgd 8.5 nC Note5 Body-drain diode forward voltage V 0.96 1.60 V I = 20 A, V = 0 DF F GS Body-drain diode reverse recovery time t 400 ns I = 20 A rr F V = 0 Body-drain diode reverse recovery I 25 A GS rr Note5 di /dt = 100 A/ s current F Body-drain diode reverse recovery Q 5.6 C rr charge Notes: 5. Pulse test R07DS0245EJ0500 Rev.5.00 Page 2 of 7 Jan 23, 2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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