Preliminary Datasheet RJK60S5DPK-M0 R07DS0245EJ0500 600V - 20A - SJ MOS FET Rev.5.00 High Speed Power Switching Jan 23, 2013 Features Superjunction MOSFET Low on-resistance R = 0.150 typ. (at I = 10 A, V = 10 V, Ta = 25 C) DS(on) D GS High speed switching t = 23 ns typ. (at I = 10 A, V = 10 V, R = 30 , Rg = 10 , Ta = 25 C) f D GS L Outline RENESAS Package code: PRSS0004ZH-A (Package name:TO-3PSG) D 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 600 V DSS Gate to source voltage V +30, 20 V GSS Note1 Drain current Tc = 25C I 20 A D) Note1 Tc = 100C I 12.6 A D) Note1 Drain peak current I 40 A D (pulse) Note1 Body-drain diode reverse drain current I 20 A DR Note1 Body-drain diode reverse drain peak current I 40 A DR (pulse) Note2 Avalanche current I 5 A AP Note2 Avalanche energy E 1.36 mJ AR Note3 MOSFET dv/dt ruggedness dv/dt 150 V/ns Note4 Channel dissipation Pch 192.3 W Channel to case thermal impedance ch-c 0.65 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Limited by Tch max. 2. STch = 25 C, Tch 150C 3. Value at Tj = 25C, V 480 V DS 4. Value at Tc = 25C R07DS0245EJ0500 Rev.5.00 Page 1 of 7 Jan 23, 2013 RJK60S5DPK-M0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max UnitTest conditions Drain to source breakdown voltage V 600 V I = 10 mA, V = 0 (BR)DSS D GS Zero gate voltage drain current I 1 mAV = 600 V, V = 0 DSS DS GS Gate to source leak current I 0.1 AV = +30V, 20 V, V = 0 GSS GS DS Gate to source cutoff voltage V 3 5 V V = 10 V, I = 1 mA GS(off) DS D Note5 Static drain to source on state R 0.150 0.178 I = 10 A, V = 10 V DS(on) D GS resistance R 0.375 Ta = 150C DS(on Note5 I = 10 A, V = 10 V D GS Gate resistance Rg 2.5 f = 1 MHz V = 25 V, V = 0 DS GS Input capacitance Ciss 1600 pF V = 25 V DS V = 0 GS Output capacitance Coss 2160 pF f = 100kHz Reverse transfer capacitance Crss 8.2 pF Turn-on delay time t 23 ns I = 10 A d(on) D V = 10 V Rise time t 25 ns GS r R = 30 L Turn-off delay time t 49 ns d(off) Note5 Rg = 10 Fall time t 23 ns f Total gate charge Qg 27 nC V = 480 V DD V = 10 V Gate to source charge Qgs 10.5 nC GS Note5 I = 20 A D Gate to drain charge Qgd 8.5 nC Note5 Body-drain diode forward voltage V 0.96 1.60 V I = 20 A, V = 0 DF F GS Body-drain diode reverse recovery time t 400 ns I = 20 A rr F V = 0 Body-drain diode reverse recovery I 25 A GS rr Note5 di /dt = 100 A/ s current F Body-drain diode reverse recovery Q 5.6 C rr charge Notes: 5. Pulse test R07DS0245EJ0500 Rev.5.00 Page 2 of 7 Jan 23, 2013