RKS100KG#P1 Renesas

RKS100KG Silicon Epitaxial Planar Diode for High Speed Switching REJ03G1698-0100 Rev.1.00 Jul 03, 2008 Features Low capacitance. (C = 2.0 pF max) Short reverse recovery time. (t =3.0 ns max) rr Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information Part No. Laser Mark Package Name Package Code RKS100KG H2 URP PTSP0002ZA-A Pin Arrangement Cathode mark Mark 12H2 1. Cathode 2. Anode REJ03G1698-0100 Rev.1.00 Jul 03, 2008 Page 1 of 4 RKS100KG Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 V R 1 Forward current I * 200 mA F 2 Non-Repetitive peak forward surge current I * 4 A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Forward current with mounting on the board of Figure 1. 2. Within 1 s forward surge current. 43.4 10 0.6 0.5 0.6 Unit: mm Figure 1 Board Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V 0.8 V I = 10 mA F1 F V 1.2 I = 100 mA F2 F Reverse current I 0.1 A V = 80 V R R Capacitance C 2.0 pF V = 0 V, f = 1 MHz R 1 Reverse recovery time* t 3.0 ns I = 10 mA, V = 6 V, R = 50 rr F R L Note: 1. Reverse recovery time test circuit DC Supply 3k 0.1F Sampling Ro = 50 Pulse Rin = 50 Generator Oscilloscope Trigger REJ03G1698-0100 Rev.1.00 Jul 03, 2008 Page 2 of 4 10 40