APT10SCD65K
650V 10A
Zero Recovery Silicon Carbide Schottky Diode
(K)
PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS
Higher Reliability Systems
Anti-Parallel Diode Zero Recovery Time (t )
rr
-Switchmode Power Supply
-Inverters Popular TO-220 Package Minimizes or eliminates
snubber
1
Power Factor Correction (PFC) Low Forward Voltage
2
Low Leakage Current
1
2
1 - Cathode
2 - Anode
Back of Case -Cathode
MAXIMUM RATINGS T = 25C unless otherwise specified.
C
Symbol Characteristic / Test Conditions Ratings Unit
V Maximum D.C. Reverse Voltage
R
V Maximum Peak Repetitive Reverse Voltage 650 Volts
RRM
V Maximum Working Peak Reverse Voltage
RWM
T = 25C 17
C
I Maximum D.C. Forward Current
F
T = 100C 9
C
Amps
I 50
Repetitive Peak Forward Surge Current (T = 45C, t = 10ms, Half Sine Wave)
FRM
J p
I 110
Non-Repetitive Forward Surge Current (T = 25C, t = 10ms, Half Sine)
FSM
J p
T = 25C 63
C
P Power Dissipation W
TOT
T = 110C 20
C
T , T Operating and Storage Junction Temperature Range -55 to 150
J STG
C
T Lead Temperature for 10 Seconds 300
L
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions Min Typ Max Unit
I = 10A T = 25C 1.5 1.8
F J
V Forward Voltage Volts
F
I = 10A, T = 150C 2.0
F J
V = 650V T = 25C 10 200
R J
I Maximum Reverse Leakage Current A
RM
V = 650V, T = 150C 125
R J
Q Total Capactive Charge V = 300V, I = 10A, di/dt = -500A/s, T = 25C 80 nC
c R F J
Junction Capacitance V = 1V, T = 25C, f = 1MHz 300
R J
C Junction Capacitance V = 100V, T = 25C, f = 1MHz 72 pF
T R J
Junction Capacitance V = 300V, T = 25C, f = 1MHz 47
R J
APT10SCD65K
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions Min Typ Max Unit
Junction-to-Case Thermal Resistance 2.0 C/W
R
JC
0.07 oz
W Package Weight
T
1.9 g
6.4 lbin
Torque Maximum Mounting Torque
0.7 Nm
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
2.5
2.0
D = 0.9
1.5 0.7
0.5 Note:
1.0
t
1
0.3
t
2
0.5
t
1
t
Duty Factor D = / 2
0.1
Peak T = P x Z + T
J DM JC C
0.05
SINGLE PULSE
0
-5 -4 -3 -2
10 10 10 10
0.1 1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
18
20
T = -55C
J
16
T = 25C
J
14
15
12
T = 125C 10
J
10
8
T = 150C
J
6
5
4
2
0
0
25 50 75 100 125 150
0 1 2 3 4
Case Temperature (C)
V , ANODE-TO-CATHODE VOLTAGE (V)
F
FIGURE 3, Maximum Forward Current vs. Case Temperature
FIGURE 2, Forward Current vs. Forward Voltage
050-7706 Rev A 8-2013
I , FORWARD CURRENT (A)
F
Z , THERMAL IMPEDANCE (C/W)
JC
I (peak) (A)
F
P
DM