DSA300I200NA IXYS

DSA300I200NA preliminary V = 200 V RRM Schottky Diode I = 300 A FAV V = 0.91 V F High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Very low Vf Rectifiers in switch mode power Isolation Voltage: V~ 3000 Extremely low switching losses supplies (SMPS) Industry standard outline Low Irm values Free wheeling diode in low voltage RoHS compliant Improved thermal behaviour converters Epoxy meets UL 94V-0 High reliability circuit operation Base plate: Copper Low voltage peaks for reduced internally DCB isolated protection circuits Advanced power cycling Low noise switching Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210309b 2021 IXYS all rights reservedDSA300I200NA preliminary Ratings Schottky Symbol Definition Conditions min. typ. max. Unit T = 25C 200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 2 0 0 V T = 25C 3 mA R R VJ V = 2 0 0 V T = 1 5 0 C 30 mA R VJ forward voltage drop V I = 3 0 0 A T = 25C 1.03 V F F VJ I = 6 0 0 A 1.29 V F T = C 0.91 V I = 3 0 0 A 125 F VJ I = 6 0 0 A 1.22 V F average forward current T = 9 5 C T = 1 5 0 C 300 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 0.57 V threshold voltage F0 VJ for power loss calculation only slope resistance r 1.03 m F thermal resistance junction to case 0.15 K/W R thJC thermal resistance case to heatsink K/W R 0.1 thCH P total power dissipation T = 25C 830 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 4.80 kA I R FSM VJ junction capacitance V = 2 4 V f = 1 MHz T = 25C 2.22 nF C J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20210309b 2021 IXYS all rights reserved