CDM3-800 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: POWER MOSFET The CENTRAL SEMICONDUCTOR CDM3-800 is a 3.0 AMP, 800 VOLT 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low r , low threshold voltage, and low gate charge for DS(ON) optimal efficiency. MARKING: FULL PART NUMBER DPAK CASE APPLICATIONS: FEATURES: Power Factor Correction High voltage capability (V =800V) DS Alternative energy inverters Low gate charge (Q =11.3nC TYP) g(tot) Solid State Lighting (SSL) Low r (3.8 TYP) DS(ON) MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS Continuous Drain Current (Steady State) I 3.0 A D Maximum Pulsed Drain Current, tp=10s I 12 A DM Continuous Source Current (Body Diode) I 3.0 A S Maximum Pulsed Source Current (Body Diode) I 12 A SM Single Pulse Avalanche Energy (Note 1) E 173 mJ AS Power Dissipation P 80 W D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 1.56 C/W JC Thermal Resistance 110 C/W JA Note 1: L=30mH, I =3.15A, V =100V, R =25, Initial T =25C AS DD G J ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =30V, V=0 10 100 nA GSSF GSSR GS DS I V =800V, V=0 0.08 1.0 A DSS DS GS BV V =0, I=250A 800 V DSS GS D V V =V , I=250A 2.0 3.0 4.0 V GS(th) GS DS D V V =0, I=3.0A 0.98 1.4 V SD GS S r V =10V, I=1.5A 3.8 4.8 DS(ON) GS D C V =25V, V =0, f=1.0MHz 1.5 pF rss DS GS C V =25V, V =0, f=1.0MHz 415 pF iss DS GS C V =25V, V =0, f=1.0MHz 44 pF oss DS GS R1 (13-May 2015)CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS TYP UNITS Q V =640V, V =10V, I =3.0A (Note 2) 11.3 nC g(tot) DS GS D Q V =640V, V =10V, I =3.0A (Note 2) 2.55 nC gs DS GS D Q V =640V, V =10V, I =3.0A (Note 2) 5.28 nC gd DS GS D t V =400V, I =3.0A, R =25 (Note 2) 10 ns d(on) DD D G t V =400V, I =3.0A, R =25 (Note 2) 23 ns r DD D G t V =400V, I =3.0A, R =25 (Note 2) 25 ns d(off) DD D G t V =400V, I =3.0A, R =25 (Note 2) 25 ns f DD D G t V =0, I =3.0A, di/dt=100A/s (Note 2) 437 ns rr GS S Q V =0, I =3.0A, di/dt=100A/s (Note 2) 1.68 C rr GS S Note 2: Pulse Width < 300s, Duty Cycle < 2% DPAK CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER R1 (13-May 2015) www.centralsemi.com