X-On Electronics has gained recognition as a prominent supplier of CDM3-800 TR13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CDM3-800 TR13 MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CDM3-800 TR13 Central Semiconductor

CDM3-800 TR13 electronic component of Central Semiconductor
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Part No.CDM3-800 TR13
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W
Datasheet: CDM3-800 TR13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.6479 ea
Line Total: USD 1619.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.6479
5000 : USD 0.6479
7500 : USD 0.6479
10000 : USD 0.6479

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the CDM3-800 TR13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CDM3-800 TR13 and other electronic components in the MOSFETs category and beyond.

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CDM3-800 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: POWER MOSFET The CENTRAL SEMICONDUCTOR CDM3-800 is a 3.0 AMP, 800 VOLT 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low r , low threshold voltage, and low gate charge for DS(ON) optimal efficiency. MARKING: FULL PART NUMBER DPAK CASE APPLICATIONS: FEATURES: Power Factor Correction High voltage capability (V =800V) DS Alternative energy inverters Low gate charge (Q =11.3nC TYP) g(tot) Solid State Lighting (SSL) Low r (3.8 TYP) DS(ON) MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS Continuous Drain Current (Steady State) I 3.0 A D Maximum Pulsed Drain Current, tp=10s I 12 A DM Continuous Source Current (Body Diode) I 3.0 A S Maximum Pulsed Source Current (Body Diode) I 12 A SM Single Pulse Avalanche Energy (Note 1) E 173 mJ AS Power Dissipation P 80 W D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 1.56 C/W JC Thermal Resistance 110 C/W JA Note 1: L=30mH, I =3.15A, V =100V, R =25, Initial T =25C AS DD G J ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =30V, V=0 10 100 nA GSSF GSSR GS DS I V =800V, V=0 0.08 1.0 A DSS DS GS BV V =0, I=250A 800 V DSS GS D V V =V , I=250A 2.0 3.0 4.0 V GS(th) GS DS D V V =0, I=3.0A 0.98 1.4 V SD GS S r V =10V, I=1.5A 3.8 4.8 DS(ON) GS D C V =25V, V =0, f=1.0MHz 1.5 pF rss DS GS C V =25V, V =0, f=1.0MHz 415 pF iss DS GS C V =25V, V =0, f=1.0MHz 44 pF oss DS GS R1 (13-May 2015)CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS TYP UNITS Q V =640V, V =10V, I =3.0A (Note 2) 11.3 nC g(tot) DS GS D Q V =640V, V =10V, I =3.0A (Note 2) 2.55 nC gs DS GS D Q V =640V, V =10V, I =3.0A (Note 2) 5.28 nC gd DS GS D t V =400V, I =3.0A, R =25 (Note 2) 10 ns d(on) DD D G t V =400V, I =3.0A, R =25 (Note 2) 23 ns r DD D G t V =400V, I =3.0A, R =25 (Note 2) 25 ns d(off) DD D G t V =400V, I =3.0A, R =25 (Note 2) 25 ns f DD D G t V =0, I =3.0A, di/dt=100A/s (Note 2) 437 ns rr GS S Q V =0, I =3.0A, di/dt=100A/s (Note 2) 1.68 C rr GS S Note 2: Pulse Width < 300s, Duty Cycle < 2% DPAK CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER R1 (13-May 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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