Preliminary Datasheet RJK60S7DPP-E0 R07DS0643EJ0300 600V - 30A - SJ MOS FET Rev.3.00 High Speed Power Switching Dec 10, 2012 Features Superjunction MOSFET Low on-resistance R = 0.1 typ. (at I = 15 A, V = 10 V, Ta = 25 C) DS(on) D GS High speed switching t = 9 ns typ. (at I = 15 A, V = 10 V, R = 20 , Rg = 10 , Ta = 25 C) f D GS L Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain G 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 600 V DSS Gate to source voltage V +30, 20 V GSS Note1 Drain current Tc = 25C I 30 A D Note1 Tc = 100C I 19 A D Note1 Drain peak current I 60 A D (pulse) Note1 Body-drain diode reverse drain current I 30 A DR Note1 Body-drain diode reverse drain peak current I 60 A DR (pulse) Note2 Avalanche current I 7.5 A AP Note2 Avalanche energy E 3.06 mJ AR Note3 Channel dissipation Pch 34.7 W Channel to case thermal impedance ch-c 3.6 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Limited by Tch max. 2. STch = 25 C, Tch 150C 3. Value at Tc = 25C R07DS0643EJ0300 Rev.3.00 Page 1 of 7 Dec 10, 2012 RJK60S7DPP-E0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max UnitTest conditions Drain to source breakdown voltage V 600 V I = 10 mA, V = 0 (BR)DSS D GS Zero gate voltage drain current I 1 mAV = 600 V, V = 0 DSS DS GS Gate to source leak current I 0.1 AV = +30V, 20 V, V = 0 GSS GS DS Gate to source cutoff voltage V 3 5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 0.100 0.125 I = 15 A, V = 10 V DS(on) D GS resistance R 0.25 Ta = 150C DS(on) Note4 I = 15 A, V = 10 V D GS Gate resistance Rg 2.0 f = 1 MHz V = 25 V, V = 0 DS GS Input capacitance Ciss 2300 pF V = 25 V DS V = 0 GS Output capacitance Coss 3000 pF f = 100 kHz Reverse transfer capacitance Crss 10 pF Turn-on delay time t 27 ns I = 15 A d(on) D V = 10 V Rise time t 28 ns GS r R = 20 L Turn-off delay time t 55 ns d(off) Note4 Rg = 10 Fall time t 9 ns f Total gate charge Qg 39 nC V = 480 V DD V = 10 V Gate to source charge Qgs 15 nC GS Note4 I = 30 A D Gate to drain charge Qgd 11 nC Note4 Body-drain diode forward voltage V 1.0 1.6 V I = 30 A, V = 0 DF F GS Body-drain diode reverse recovery time t 490 ns I = 30 A rr F V = 0 Body-drain diode reverse recovery I 26 A GS rr Note4 di /dt = 100 A/ s current F Body-drain diode reverse recovery Q 7.1 C rr charge Notes: 4 Pulse test R07DS0643EJ0300 Rev.3.00 Page 2 of 7 Dec 10, 2012