X-On Electronics has gained recognition as a prominent supplier of DMT3004LPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT3004LPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT3004LPS-13 Diodes Incorporated

DMT3004LPS-13 electronic component of Diodes Incorporated
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Part No.DMT3004LPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 30V N-Ch Enh FET
Datasheet: DMT3004LPS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.4296 ea
Line Total: USD 1074 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.5464
5000 : USD 0.5409
10000 : USD 0.5355
15000 : USD 0.5301
20000 : USD 0.5248
25000 : USD 0.5196
30000 : USD 0.5144
50000 : USD 0.5092
100000 : USD 0.5041

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4296
5000 : USD 0.4296
10000 : USD 0.4224
25000 : USD 0.4116

   
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We are delighted to provide the DMT3004LPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT3004LPS-13 and other electronic components in the MOSFETs category and beyond.

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DMT3004LPS Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features and Benefits Low R Minimizes On-State Losses DS(ON) I Max D BV R Max Excellent Q x R Product (FOM) DSS DS(ON) gd DS(ON) T = +25C C Advanced Technology for DC-DC Converters 3.8m V = 10V 140A Small Form Factor Thermally Efficient Package Enables Higher GS 30V Density End Products 6m V = 4.5V 110A GS 100% Unclamped Inductive Switching Ensures More Reliability Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (R ), yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI 5060-8 S D Pin1 S D S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT3004LPS-13 2,500/Tape & Reel PowerDI 5060-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT3004LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS +20 Gate-Source Voltage V V GSS -16 T = +25C 21 A A Continuous Drain Current, VGS = 10V (Note 5) ID 17 T = +70C A T = +25C 140 C A Continuous Drain Current, V = 10V I GS D 110 T = +70C C Maximum Continuous Body Diode Forward Current (Note 5) T = +25C I 3 A A S Maximum Continuous Body Diode Forward Current T = +25C I 48 A C S Maximum Body Diode Forward Pulse Current T = +25C I 180 A C SM Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 180 A I DM Avalanche Current, L=0.3mH 27 A I AS Avalanche Energy, L=0.3mH 110 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit T = +25C A 2.7 (Note 5) Total Power Dissipation P W D 113 TC = +25C Thermal Resistance, Junction to Ambient (Note 5) Steady State 47 R JA C/W Thermal Resistance, Junction to Case 1.1 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage 100 nA I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 3.8 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 6 V = 4.5V, I = 7A GS D Diode Forward Voltage V 0.70 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 2,370 iss V = 15V, V = 0V, DS GS Output Capacitance C 1,360 pF oss f = 1MHz Reverse Transfer Capacitance C 240 rss Gate Resistance 0.7 Rg VDS = 0V, VGS = 0V, f = 1MHz 43.7 Total Gate Charge (V = 10V) Q GS g Gate-Source Charge 6.9 nC Q V = 15V, I = 20A gs DS D Gate-Drain Charge 8 Q gd Turn-On Delay Time 6.2 t D(ON) Turn-On Rise Time t 4.2 V = 15V, V = 10V, R DD GS ns Turn-Off Delay Time t 21 R = 3, R = 0.75 D(OFF) G L Turn-Off Fall Time t 8 F Body Diode Reverse Recovery Time t 25 ns RR I = 15A, di/dt = 500A/s F Body Diode Reverse Recovery Charge Q 37 nC RR Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3004LPS January 2016 Diodes Incorporated www.diodes.com Document number: DS37045 Rev. 4 - 2 NEW PRODUCT ADAVDAVNACNECDE I NINFFOORRMMAATTIOIONN

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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