DMT3004LPS Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features and Benefits Low R Minimizes On-State Losses DS(ON) I Max D BV R Max Excellent Q x R Product (FOM) DSS DS(ON) gd DS(ON) T = +25C C Advanced Technology for DC-DC Converters 3.8m V = 10V 140A Small Form Factor Thermally Efficient Package Enables Higher GS 30V Density End Products 6m V = 4.5V 110A GS 100% Unclamped Inductive Switching Ensures More Reliability Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (R ), yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI 5060-8 S D Pin1 S D S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT3004LPS-13 2,500/Tape & Reel PowerDI 5060-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT3004LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS +20 Gate-Source Voltage V V GSS -16 T = +25C 21 A A Continuous Drain Current, VGS = 10V (Note 5) ID 17 T = +70C A T = +25C 140 C A Continuous Drain Current, V = 10V I GS D 110 T = +70C C Maximum Continuous Body Diode Forward Current (Note 5) T = +25C I 3 A A S Maximum Continuous Body Diode Forward Current T = +25C I 48 A C S Maximum Body Diode Forward Pulse Current T = +25C I 180 A C SM Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 180 A I DM Avalanche Current, L=0.3mH 27 A I AS Avalanche Energy, L=0.3mH 110 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit T = +25C A 2.7 (Note 5) Total Power Dissipation P W D 113 TC = +25C Thermal Resistance, Junction to Ambient (Note 5) Steady State 47 R JA C/W Thermal Resistance, Junction to Case 1.1 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage 100 nA I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 3.8 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 6 V = 4.5V, I = 7A GS D Diode Forward Voltage V 0.70 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 2,370 iss V = 15V, V = 0V, DS GS Output Capacitance C 1,360 pF oss f = 1MHz Reverse Transfer Capacitance C 240 rss Gate Resistance 0.7 Rg VDS = 0V, VGS = 0V, f = 1MHz 43.7 Total Gate Charge (V = 10V) Q GS g Gate-Source Charge 6.9 nC Q V = 15V, I = 20A gs DS D Gate-Drain Charge 8 Q gd Turn-On Delay Time 6.2 t D(ON) Turn-On Rise Time t 4.2 V = 15V, V = 10V, R DD GS ns Turn-Off Delay Time t 21 R = 3, R = 0.75 D(OFF) G L Turn-Off Fall Time t 8 F Body Diode Reverse Recovery Time t 25 ns RR I = 15A, di/dt = 500A/s F Body Diode Reverse Recovery Charge Q 37 nC RR Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3004LPS January 2016 Diodes Incorporated www.diodes.com Document number: DS37045 Rev. 4 - 2 NEW PRODUCT ADAVDAVNACNECDE I NINFFOORRMMAATTIOIONN