NTJS3151P, NVJS3151P MOSFET Power, Single, P-Channel, Trench, ESD Protected, SC-88 12 V, 3.3 A www.onsemi.com Features V R Typ I Max (BR)DSS DS(on) D Leading Trench Technology for Low R Extending Battery Life DS(ON) 45 m 4.5 V SC88 Small Outline (2x2 mm, SC706 Equivalent) Gate Diodes for ESD Protection 12 V 3.3 A 67 m 2.5 V NV Prefix for Automotive and Other Applications Requiring Unique 133 m 1.8 V Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SC88 (SOT363) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D 1 6 D Applications High Side Load Switch D 2 5 D Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (T = 25C unless otherwise stated) J G 3 4 S Parameter Symbol Value Units DraintoSource Voltage V 12 V DSS Top View D GatetoSource Voltage V 12 V GS Continuous Drain Steady T = 25 C I 2.7 A A D Current (Note 1) State 3 k T = 85 C 2.0 A G t 5 s T = 25 C 3.3 A Power Dissipation Steady T = 25 C P 0.625 W A D (Note 1) State Pulsed Drain Current I 8.0 A t = 10 s S p DM Operating Junction and Storage Temperature T , 55 to J C MARKING DIAGRAM & T 150 STG PIN ASSIGNMENT Source Current (Body Diode) I 0.8 A S DD S Lead Temperature for Soldering Purposes 260 C T L 6 (1/8 from case for 10 s) 1 XXX M SC88/SOT363 THERMAL RESISTANCE RATINGS (Note 1) CASE 419B Parameter Symbol Max Units STYLE 28 1 C/W JunctiontoAmbient Steady State R 200 JA DD G JunctiontoAmbient t 5 s R 141 JA XXX = Device Code JunctiontoLead Steady State R 102 JL M = Date Code = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location) assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 4 NTJS3151/DNTJS3151P, NVJS3151P ELECTRICAL CHARACTERISTICS (T =25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 12 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 10 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 9.6 V, GS V = 0 V DS T = 125C 2.5 J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 1.5 A GSS DS GS V = 0 V, V = 12 V 10 mA DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 100 A 0.40 1.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 3.4 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 3.3 A 45 60 DS(on) GS D m V = 2.5 V, I = 2.9 A 67 90 GS D V = 1.8 V, I = 1.0 A 133 160 GS D Forward Transconductance g V = 10 V, I = 3.3 A 15 S FS GS D CHARGES AND CAPACITANCES Input Capacitance C 850 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 170 OSS V = 12 V DS Reverse Transfer Capacitance C 110 RSS Total Gate Charge Q 8.6 nC G(TOT) V = 4.5 V, V = 5.0 V, GS DS GatetoSource Charge Q 1.3 GS I = 3.3 A D GatetoDrain Charge Q 2.2 GD Gate Resistance R 3000 G SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 0.86 s d(ON) Rise Time t 1.5 r V = 4.5 V, V = 6.0 V, GS DD I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 3.5 d(OFF) Fall Time t 3.9 f DRAINSOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, GS I = 3.3 A S T = 125C 0.7 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2