NTLJS3113P MOSFET Power, Single, P-Channel, WDFN, 2X2 mm -20 V, -7.7 A Features www.onsemi.com Recommended Replacement Device NTLUS3A40P WDFN Package Provides Exposed Drain Pad for Excellent Thermal V R MAX I MAX (Note 1) (BR)DSS DS(on) D Conduction 40 m 4.5 V 2x2 mm Footprint Same as SC88 Package 50 m 2.5 V Lowest R Solution in 2x2 mm Package DS(on) 20 V 7.7 A 75 m 1.8 V 1.5 V R Rating for Operation at Low Voltage Logic Level Gate DS(on) Drive 200 m 1.5 V Low Profile (< 0.8 mm) for Easy Fit in Thin Environments S These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant G Applications DCDC Converters (Buck and Boost Circuits) Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDAs, Media Players, etc. D PCHANNEL MOSFET High Side Load Switch MARKING S D MAXIMUM RATINGS (T = 25C unless otherwise noted) DIAGRAM J Parameter Symbol Value Unit WDFN6 1 6 J8M CASE 506AP 2 5 DraintoSource Voltage V 20 V DSS 3 4 Pin 1 GatetoSource Voltage V 8.0 V GS J8 = Specific Device Code Continuous Drain I A T = 25C 5.8 D Steady A M = Date Code Current (Note 1) State T = 85C 4.4 A = PbFree Package (Note: Microdot may be in either location) t 5 s T = 25C 7.7 A Power Dissipation Steady P 1.9 W D (Note 1) State PIN CONNECTIONS T = 25C A t 5 s 3.3 Continuous Drain I A T = 25C 3.5 D D A D 1 6 Current (Note 2) T = 85C 2.5 Steady A State D Power Dissipation P 0.7 W D D 2 5 T = 25C D A (Note 2) Pulsed Drain Current t = 10 s I 23 A p DM G 3 4 S S Operating Junction and Storage Temperature T , T 55 to C J STG 150 (Top View) Source Current (Body Diode) (Note 2) I 2.8 A S Lead Temperature for Soldering Purposes T 260 C L ORDERING INFORMATION (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be NTLJS3113PT1G WDFN6 assumed, damage may occur and reliability may be affected. 3000/Tape & Reel (PbFree) 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq NTLJS3113PTAG 2 oz including traces). For information on tape and reel specifications, 2. Surface Mounted on FR4 Board using the minimum recommended pad size, including part orientation and tape sizes, please 2 (30 mm , 2 oz Cu). refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 6 NTLJS3113P/DNTLJS3113P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 65 JA JunctiontoAmbient t 5 s (Note 3) R 38 C/W JA JunctiontoAmbient Steady State Min Pad (Note 4) R 180 JA 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu). MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 250 A, Ref to 25C 10.1 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 16 V, V = 0 V DS GS T = 85C 10 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 1.0 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.45 0.67 1.0 V GS(TH) GS DS D Negative Gate Threshold V /T 2.68 mV/C GS(TH) J Temperature Coefficient DraintoSource OnResistance R V = 4.5, I = 3.0 A 32 40 m DS(on) GS D V = 2.5, I = 3.0 A 44 50 GS D V = 1.8, I = 2.0 A 67 75 GS D V = 1.5, I = 1.8 A 90 200 GS D Forward Transconductance g V = 16 V, I = 3.0 A 5.9 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1329 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 213 OSS V = 16 V DS Reverse Transfer Capacitance C 120 RSS Total Gate Charge Q 13 15.7 nC G(TOT) Threshold Gate Charge Q 1.5 G(TH) V = 4.5 V, V = 16 V, GS DS I = 3.0 A D GatetoSource Charge Q 2.2 GS GatetoDrain Charge Q 2.9 GD Gate Resistance R 14.4 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 6.9 ns d(ON) Rise Time t 17.5 r V = 4.5 V, V = 10 V, GS DD I = 3.0 A, R = 3.0 D G TurnOff Delay Time t 60 d(OFF) Fall Time t 56.5 f DRAINSOURCE DIODE CHARACTERISTICS T = 25C 0.78 1.2 Forward Recovery Voltage V SD J V = 0 V, IS = 1.0 A V GS T = 125C 0.67 J Reverse Recovery Time t 70.8 106 RR Charge Time t 14.3 ns a V = 0 V, d /d = 100 A/ s, GS ISD t I = 1.0 A S Discharge Time t 56.4 b Reverse Recovery Time Q 44 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2