MOSFET Power, Dual, N-Channel, Cool, UDFN6, 2.0x2.0x0.55 mm 30 V, 7.3 A NTLUD4C26N www.onsemi.com Features MOSFET UDFN Package with Exposed Drain Pads for Excellent Thermal V R MAX I MAX Conduction (BR)DSS DS(on) D Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving 24 m 4.5 V 30 V 7.3 A Ultra Low R DS(on) 65 m 1.8 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D1 D2 Applications Power Load Switch Wireless Charging G1 G2 DCDC Converters S1 S2 MAXIMUM RATINGS (T = 25C unless otherwise stated) Dual NChannel MOSFET J Parameter Symbol Value Unit MARKING Drain-to-Source Voltage V 30 V DSS DIAGRAM Gate-to-Source Voltage V 12 V GS 1 6 UDFN6 CASE 517BF AC M Continuous Drain Steady I A T = 25C 7.3 A D COOL Current (Note 1) State T = 85C 5.3 1 A AC= Specific Device Code t 5 s T = 25C 9.1 A M = Date Code Power Dissipa- P W Steady T = 25C 1.70 = PbFree Package A D tion (Note 1) State (Note: Microdot may be in either location) t 5 s T = 25C 2.63 A Continuous Drain Steady T = 25C I 4.8 A A D Current (Note 2) State T = 85C 3.4 A Power Dissipation (Note 2) T = 25C P 0.72 W A D Pulsed Drain Current t = 10 s I 22 A p DM MOSFET Operating Junction and Storage T , -55 to C J Temperature T 150 STG Source Current (Body Diode) (Note 1) I 3.0 A S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (Top View) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq See detailed ordering and shipping information on page 3 of 2 oz including traces). this data sheet. 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2020 Rev. 3 NTLUD4C26N/DNTLUD4C26N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 73.6 JA Junction-to-Ambient t 5 s (Note 3) R 47.6 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 174.4 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 7 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 24 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.6 1.1 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 2.8 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 4.5 V, I = 5.0 A 20 24 DS(on) GS D V = 1.8 V, I = 1.0 A 40 65 GS D Forward Transconductance g V = 1.5 V, I = 5.0 A 23 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 460 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 225 OSS V = 15 V DS Reverse Transfer Capacitance C 27 RSS Total Gate Charge Q V = 4.5 V, V = 10 V 5.0 8.0 nC G(TOT) GS DS I = 5.0 A D nC Total Gate Charge Q 5.5 9.0 G(TOT) Threshold Gate Charge Q 0.55 G(TH) V = 4.5 V, V = 15 V GS DS I = 5.0 A D Gate-to-Source Charge Q 2.5 GS Gate-to-Drain Charge Q 1.1 GD SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS ns Turn-On Delay Time t 5 d(ON) Rise Time t 15 r V = 4.5 V, V = 15 V, GS DD I = 5.0 A, R = 1 D G Turn-Off Delay Time t 13 d(OFF) Fall Time t 1.7 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.7 1.0 SD J V = 0 V, GS I = 2.0 A S T = 125C 0.6 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2