NTHL065N65S3F ON Semiconductor

NTHL065N65S3F MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 46 A, 65 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(on) D charge performance. This advanced technology is tailored to minimize 650 V 65 m 10 V 46 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. D Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and G improve system reliability. Features S 700 V T = 150C J Typ. R = 54 m DS(on) Ultra Low Gate Charge (Typ. Q = 98 nC) g Low Effective Output Capacitance (Typ. C = 876 pF) oss(eff.) 100% Avalanche Tested This Device is PbFree and is RoHS Compliant G D S Applications TO2473LD Telecom / Server Power Supplies CASE 340CH Industrial Power Supplies MARKING DIAGRAM EV Charger USP / Solar Y&Z&3&K NTHL 065N65S3F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NTHL065N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2019 Rev. 4 NTHL065N65S3F/DNTHL065N65S3F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter NTHL065N65S3F Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f 1 Hz) 30 I Drain Current A Continuous (T = 25C) 46 D C Continuous (T = 100C) 30 C I Drain Current Pulsed (Note 1) 115 A DM E Single Pulsed Avalanche Energy (Note 2) 635 mJ AS I Avalanche Current (Note 2) 5.3 A AS E Repetitive Avalanche Energy (Note 1) 3.37 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation T = 25C 337 W D C Derate Above 25C 2.7 W/C T , T Operating and Storage Temperature Range 55 to +150 J STG C Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 L C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 5.3 A, R = 25 , starting T = 25C. AS G J 3. I 23 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter NTHL065N65S3F Unit Thermal Resistance, Junction to Case, Max. 0.37 R C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity NTHL065N65S3F NTHL065N65S3F TO247 Tube N/A N/A 30 Units www.onsemi.com 2