X-On Electronics has gained recognition as a prominent supplier of BSR606N H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSR606N H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSR606N H6327 Infineon

BSR606N H6327 electronic component of Infineon
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Part No.BSR606N H6327
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 60V 2.3A SOT-23-3
Datasheet: BSR606N H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.3127
10 : USD 0.618
100 : USD 0.3355
500 : USD 0.2662
1000 : USD 0.2123
3000 : USD 0.2082
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the BSR606N H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSR606N H6327 and other electronic components in the MOSFETs category and beyond.

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BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R V =10 V 60 mW DS(on),max GS Enhancement mode V =4.5 V 90 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SC59 100%lead-free Halogen-free RoHS compliant 3 1 2 Type Package Tape and Reel Information Marking Halogen- Package BSR606N PG-SC59 H6327: 3000 pcs/ reel Yes Non-dry LIs Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 2.3 A D A T =70C 1.8 A I T =25C Pulsed drain current 9.1 D,pulse A E I =2.3A, R =25W Avalanche energy, single pulse 20 mJ AS D GS I =2.3A, V =48V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM class 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Value refers to minimum footprint Rev 2.3 page 1 2013-05-02BSR606N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) R SMD version, device on PCB - - 250 thJA minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =0V, I =15A 1.3 1.8 2.3 GS(th) DS D V =60V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =60V, V =0V, DS GS - - 100 T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =1.1A - 63 90 mW DS(on) GS D V =10V, I =2.3A - 45 60 GS D V >2 I R , DS D DS(on)max Transconductance g 5.4 - S fs I =1.8A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mkm long they are present on both sides of the PCB. Rev 2.3 page 2 2013-05-02

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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