BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R V =10 V 60 mW DS(on),max GS Enhancement mode V =4.5 V 90 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SC59 100%lead-free Halogen-free RoHS compliant 3 1 2 Type Package Tape and Reel Information Marking Halogen- Package BSR606N PG-SC59 H6327: 3000 pcs/ reel Yes Non-dry LIs Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 2.3 A D A T =70C 1.8 A I T =25C Pulsed drain current 9.1 D,pulse A E I =2.3A, R =25W Avalanche energy, single pulse 20 mJ AS D GS I =2.3A, V =48V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM class 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Value refers to minimum footprint Rev 2.3 page 1 2013-05-02BSR606N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) R SMD version, device on PCB - - 250 thJA minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =0V, I =15A 1.3 1.8 2.3 GS(th) DS D V =60V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =60V, V =0V, DS GS - - 100 T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =1.1A - 63 90 mW DS(on) GS D V =10V, I =2.3A - 45 60 GS D V >2 I R , DS D DS(on)max Transconductance g 5.4 - S fs I =1.8A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mkm long they are present on both sides of the PCB. Rev 2.3 page 2 2013-05-02