DATA SHEET www.onsemi.com Self-Protected Low Side V (BR)DSS R TYP DS(ON) I MAX (Clamped) D Driver with Temperature 42 V 165 m 10 V 2.0 A* and Current Limit *Max current limit value is dependent on input condition. MARKING DIAGRAMS NCV8402, NCV8402A DRAIN 4 NCV8402/A is a three terminal protected LowSide Smart Discrete 4 SOT223 AYW device. The protection features include overcurrent, overtemperature, CASE 318E xxxxx 1 ESD and integrated Drain to Gate clamping for overvoltage 2 STYLE 3 3 protection. This device offers protection and is suitable for harsh 1 23 automotive environments. GATE SOURCE DRAIN Features 1 xxxxx ShortCircuit Protection DFN6 AYWW Thermal Shutdown with Automatic Restart CASE 506AX 1 Overvoltage Protection Integrated Clamp for Inductive Switching 1 xxxxx DFN6 (WF) AYWW ESD Protection CASE 506DK NCV8402AMNWT1G Wettable Flanks Product 1 dV/dt Robustness A = Assembly Location Analog Drive Capability (Logic Level Input) Y = Year W or WW = Work Week NCV Prefix for Automotive and Other Applications Requiring xxxxx = V8402 or 8402A Unique Site and Control Change Requirements = PbFree Package AECQ101 Qualified and PPAP Capable (Note: Microdot may be in either location) These Devices are PbFree and are RoHS Compliant Typical Applications DFN6 PACKAGE PIN DESCRIPTION Switch a Variety of Resistive, Inductive and Capacitive Loads GNCNC Pin Symbol Description Can Replace Electromechanical Relays and Discrete Circuits 123 1 G Gate Input Automotive / Industrial 2 NC No Connect 7 EPAD 3 NC No Connect Drain 4 S* Source 654 5 S* Source SS S Overvoltage 6 S* Source Gate Protection 7 EPAD Drain Input *Pins 4, 5, 6 are internally shorted together. It is recommended to short these pins externally. ESD Protection Temperature Current Current ORDERING INFORMATION Limit Limit Sense See detailed ordering and shipping information on page 11 of this data sheet. Source Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 27 NCV8402/DNCV8402, NCV8402A MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 42 V G DGR GatetoSource Voltage V 14 V GS Continuous Drain Current I Internally Limited D Total Power Dissipation SOT223 Version T = 25C (Note 1) P 1.1 W A D T = 25C (Note 2) 1.74 A T = 25C) 8.9 S Total Power Dissipation DFN Version T = 25C (Note 1) P 0.76 W A D T = 25C (Note 2) 1.78 A T = 25C) 8.9 S Maximum Continuous Drain Current SOT223 Version T = 25C (Note 1) I 1.54 A A D T = 25C (Note 2) 1.94 A T = 25C) 6.75 S Maximum Continuous Drain Current DFN Version T = 25C (Note 1) I 1.28 A A D T = 25C (Note 2) 1.97 A T = 25C) 6.75 S Thermal Resistance SOT223 JunctiontoAmbient Steady State (Note 1) 114 C/W R JA SOT223 JunctiontoAmbient Steady State (Note 2) R 72 JA SOT223 JunctiontoSoldering Point Steady State 14 R JS DFN JunctiontoAmbient Steady State (Note 1) R 163 JA DFN JunctiontoAmbient Steady State (Note 2) R 70 JA DFN JunctiontoSoldering Point Steady State R 14 JS Single Pulse DraintoSource Avalanche Energy E 150 mJ AS (V = 32 V, V = 5.0 V, I = 1.0 A, L = 300 mH, R = 25 ) DD G PK G(ext) V 55 V Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 9.0 , t = 400 ms) GS I L d LD Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surfacemounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2