NCV8405ADTRKG ON Semiconductor

NCV8405A, NCV8405B Self-Protected Low Side Driver with Temperature and Current Limit NCV8405A/B is a three terminal protected LowSide Smart Discrete device. The protection features include overcurrent, www.onsemi.com overtemperature, ESD and integrated DraintoGate clamping for overvoltage protection. This device is suitable for harsh automotive V (BR)DSS R TYP I MAX (Clamped) DS(ON) D environments. 42 V 90 m 10 V 6.0 A* Features *Max current limit value is dependent on input ShortCircuit Protection condition. Thermal Shutdown with Automatic Restart Drain Overvoltage Protection Integrated Clamp for Inductive Switching Overvoltage Gate ESD Protection Protection Input dV/dt Robustness Analog Drive Capability (Logic Level Input) ESD Protection NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Temperature Current Current Qualified and PPAP Capable Limit Limit Sense These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Source Typical Applications Switch a Variety of Resistive, Inductive and Capacitive Loads MARKING Can Replace Electromechanical Relays and Discrete Circuits DIAGRAM Automotive / Industrial 4 DRAIN 4 1 2 AYW 3 xxxxx SOT223 CASE 318E 1 23 STYLE 3 GATE SOURCE DRAIN 4 2 1 YWW 3 xxxxxG DPAK CASE 369C A = Assembly Location Y = Year W, WW = Work Week xxxxx = 8405A or 8405B G or = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 8 NCV8405/DNCV8405A, NCV8405B MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 42 V G DGR GatetoSource Voltage V 14 V GS Continuous Drain Current I Internally Limited D Power Dissipation SOT223 Version P W D T = 25C (Note 1) 1.0 A T = 25C (Note 2) 1.7 A T = 25C 11.4 S Power Dissipation DPAK Version T = 25C (Note 1) 2.0 A T = 25C (Note 2) 2.5 A T = 25C 40 S Thermal Resistance SOT223 Version C/W JunctiontoAmbient Steady State (Note 1) R 130 JA JunctiontoAmbient Steady State (Note 2) R 72 JA JunctiontoSoldering Point Steady State R 11 JS Thermal Resistance DPAK Version 60 JunctiontoAmbient Steady State (Note 1) R JA 50 JunctiontoAmbient Steady State (Note 2) R JA 3.0 JunctiontoSoldering Point Steady State R JS Single Pulse DraintoSource Avalanche Energy E 275 mJ AS (V = 40 V, V = 5.0 V, I = 2.8 A, L = 80 mH, R = 25 , TJ = 25C) DD G PK G(ext) Load Dump Voltage V = V + V (V = 0 and 10 V, R = 2.0 , R = 6.0 , t = 400 ms) V 53 V LD A S GS I L d LD Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surfacemounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2