Si3495DV Vishay Siliconix P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.024 at V = - 4.5 V - 7 GS TrenchFET Power MOSFET: 1.5 V Rated 0.030 at V = - 2.5 V - 6.2 GS Ultra-Low On-Resistance - 20 0.038 at V = - 1.8 V - 5.2 GS 100 % R Tested g 0.048 at V = - 1.5 V - 5.0 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS Load Switch and PA Switch for Portable Devices TSOP-6 Top V iew (4) S 1 6 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free) (1, 2, 5, 6) D Si3495DV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 95xxx P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 5 GS T = 25 C - 7 - 5.3 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 3.6 - 3.9 A A I Pulsed Drain Current - 20 DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 A a P W Maximum Power Dissipation D T = 85 C 1.0 0.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 45 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 25 30 thJF Note: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 73135 www.vishay.com S09-2110-Rev. C, 12-Oct-09 1Si3495DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.35 - 0.75 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 85 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 7 A 0.020 0.024 GS D V = - 2.5 V, I = - 6.2 A 0.024 0.030 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 5.2 A 0.030 0.038 GS D V = - 1.5 V, I = - 3 A 0.036 0.048 GS D a g V = - 5 V, I = - 7 A Forward Transconductance 25 S fs DS D a V I = - 1.7 A, V = 0 V - 0.62 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 25 38 g Q V = - 10 V, V = - 4.5 V, I = - 7 A Gate-Source Charge 2.5 nC gs DS GS D Gate-Drain Charge Q 7 gd R Gate Resistance 48.5 13 g Turn-On Delay Time t 19 30 d(on) t Rise Time V = - 10 V, R = 10 36 55 r DD L - 1 A, V = - 4.5 V, R = 6 I Turn-Off Delay Time t 200 300 ns d(off) D GEN g t Fall Time 106 160 f t I = - 1.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 35 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 5 V thru 2 V GS 16 16 1.5 V 12 12 8 8 T = 125 C C 4 4 25 C 1 V - 55 C 0 0 0 1234 5 0.0 0.4 0.8 1.2 1.6 2.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73135 2 S09-2110-Rev. C, 12-Oct-09 I - Drain Current (A) D I - Drain Current (A) D