MTP50P03HDLG Power MOSFET 50 Amps, 30 Volts, Logic Level PChannel TO220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also www.onsemi.com offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly 50 AMPERES, 30 VOLTS well suited for bridge circuits where diode speed and commutating R = 25 m DS(on) safe operating areas are critical and offer additional safety margin against unexpected voltage transients. PChannel Features D Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits G I and V Specified at Elevated Temperature DSS DS(on) S These are PbFree Devices* MARKING DIAGRAM MAXIMUM RATINGS (T = 25C unless otherwise noted) C & PIN ASSIGNMENT Rating Symbol Value Unit 4 DrainSource Voltage V 30 Vdc DSS Drain 4 DrainGate Voltage (R = 1.0 M ) V 30 Vdc GS DGR GateSource Voltage Continuous V 15 Vdc GS NonRepetitive (t 10 ms) V 20 Vpk p GSM TO220AB Drain Current Continuous I 50 Adc CASE 221A M50P03HDLG D Drain Current Continuous 100C I 31 STYLE 5 AYWW D Drain Current Single Pulse (t 10 s) I 150 Apk p DM Total Power Dissipation P 125 W D 1 Derate above 25C 1.0 W/C 2 1 3 3 Gate Source Operating and Storage Temperature Range T , T 55 to C J stg 150 2 Drain Single Pulse DraintoSource Avalanche E 1250 mJ AS Energy Starting T = 25C J M50P03HDL = Device Code (V = 25 Vdc, V = 5.0 Vdc, Peak DD GS A = Assembly Location = 50 Apk, L = 1.0 mH, R = 25 ) I L G Y = Year Thermal Resistance, C/W WW = Work Week JunctiontoCase R 1.0 JC G = PbFree Package JunctiontoAmbient, when mounted with R 62.5 JA the minimum recommended pad size Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from case for 10 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MTP50P03HDLG TO220AB 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 7 MTP50P03HDL/DMTP50P03HDLG ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (C 2.0) (Note 3) V Vdc pk (BR)DSS (V = 0 Vdc, I = 250 Adc) 30 GS D Temperature Coefficient (Positive) 26 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 30 Vdc, V = 0 Vdc) 1.0 DS GS (V = 30 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (C 3.0) (Note 3) V Vdc pk GS(th) 1.0 1.5 2.0 (V = V , I = 250 Adc) DS GS D Threshold Temperature Coefficient (Negative) 4.0 mV/C Static DraintoSource OnResistance (C 3.0) (Note 3) R pk DS(on) (V = 5.0 Vdc, I = 25 Adc) 0.020 0.025 GS D DraintoSource OnVoltage (V = 10 Vdc) V Vdc GS DS(on) (I = 50 Adc) 0.83 1.5 D (I = 25 Adc, T = 125C) 1.3 D J Forward Transconductance g mhos FS (V = 5.0 Vdc, I = 25 Adc) 15 20 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 3500 4900 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 1550 2170 oss f = 1.0 MHz) Transfer Capacitance C 550 770 rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 22 30 ns d(on) Rise Time t 340 466 r (V = 15 Vdc, I = 50 Adc, DD D V = 5.0 Vdc, R = 2.3 ) GS G TurnOff Delay Time t 90 117 d(off) Fall Time t 218 300 f Gate Charge Q 74 100 nC T (See Figure 8) Q 13.6 1 (V = 24 Vdc, I = 50 Adc, DS D V = 5.0 Vdc) GS Q 44.8 2 Q 35 3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V Vdc SD (I =50 Adc, V = 0 Vdc) S GS 2.39 3.0 (I = 50 Adc, V = 0 Vdc, T = 125C) S GS J 1.84 Reverse Recovery Time t 106 ns rr (See Figure 15) t 58 a (I = 50 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) S t 48 b Reverse Recovery Stored Charge Q 0.246 C RR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L nH D (Measured from contact screw on tab to center of die) 3.5 (Measured from the drain lead 0.25 from package to center of die) 4.5 Internal Source Inductance L nH S (Measured from the source lead 0.25 from package to source bond pad) 7.5 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Max limit Typ C = pk 3 x SIGMA www.onsemi.com 2